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Peculiarities of neutron interaction with boron containing semiconductors

Didyk A. Y., Hofman A., Szteke W., Hajewska E., Vlasukova L. A.

Nukleonika

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2009

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Vol. 54, No. 3

163-168

EN

Abstract. The results of point defect creation calculation in B4C, BN and BP semiconductor single crystals irradiated in the fast neutron reactor IBR-2 are presented. It has been shown that during the thermal neutron interaction with light isotope boron atoms (10B) the damage creation by means of fission nuclear reaction fragments (alfa-particles and 7Li recoil nuclei) exceeds the damage created by fast neutrons (En greater than 0.1 MeV) by more than two orders of value. It has been concluded that such irradiation can create a well developed radiation defect structure in boron-containing crystals with nearly homogeneous vacancy depth distribution. This may be used in technological applications for more effective diffusion of impurities implanted at low energies or deposited onto the semiconductor surface. The developed homogeneous vacancy structure is very suitable for the radiation enhanced diffusion of electrically charged or neutral impurities from the surface into the technological depth of semiconductor devices under post irradiation treatment.

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The behavior of amorphous alloys under swift heavy ion irradiation at room temperature

Didyk A., Hofman A., Savin V., Semina V., Hajewska E., Szteke W., Starosta W.

Nukleonika

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2005

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Vol. 50, nr 4

149-152

EN

Experimental results of irradiation effects by heavy ions with high inelastic energy losses at the surfaces of some amorphous alloys are presented. It was shown that all studied alloys strongly swelled: up to 15% for Ni58Nb42 under irradiation with the 305 MeV 86Kr ion at a fluence of 1015 ion/cm2. Besides, the sputtering (evaporation) process takes place, too. Calculations of the temperatures on the ion trajectory axis were presented. It was shown that the calculated temperatures are higher than the melting temperature and the evaporation temperature, too. From these findings we can conclude that the sputtering (evaporation) of atoms in amorphous alloys is present.

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Własności mechaniczne stali L485MB po próbie stresowej rurociągu przesyłowego gazu

Wasiak J., Szteke W., Biłous W., Hajewska E., Wagner T., Przyborska M.

Dozór Techniczny

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2002

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z. 6

127--128

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System SACC w diagnostyce eksploatacyjnej urządzeń ciśnieniowych

Szteke W., Biłous W., Wasiak J., Hajewska E., Przyborska M., Wagner T.

Dozór Techniczny

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2002

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z. 5

106--107