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Electrical properties of HgCdTe films grown by MOCVD and doped with as

Izhnin I. I., Savytskyy H. V., Fitsych O. I., Piotrowski J., Mynbaev K. D.

Opto-Electronics Review

2013

Vol. 21, No. 2

220-226

Electrical properties of HgCdTe films grown by metal-organic chemical vapour deposition (MOCVD) on GaAs substrates and doped with the As acceptor during the growth were studied. Discrete mobility spectrum analysis was used to extract the parameters of the as-grown films and films after ion milling and during prolonged relaxation of milling-induced defects. The measurements revealed significant compensation of the as-grown MOCVD HgCdTe with As on Te sites being the main defect, residual donor concentration of the order of (2-5)x10¹⁵ cm⁻³ and the presence of some unidentified defects.

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

Izhnin I. I., Izhnin A. I., Savytskyy H. V., Fitsych O. I., Mikhailov N. N., Varavin V. S., Dvoretsky S. A., Sidorov Y. G., Mynbaev K. D.

Opto-Electronics Review

2012

Vol. 20, No. 4

375-378

The Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 10¹⁵ cm⁻³, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.