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Study of thin, achromatic diffractive structures to focus terahertz radiation on a detector

Liebert Karolina, Rachon Martyna, Kolodziejczyk Andrzej, Sypek Maciej, Ducin Izabela, Zagrajek Przemysław, Siemion Agnieszka

Optica Applicata

2020

Vol. 50, nr 3

463--476

Thin and lightweight achromatic focusing elements with F-number close to 1 are desirable in many practical applications. We present the idea to use diffractive structures designed to work for the substantially increased THz frequency range. The paper analyses mono- and multi-focal lenses forming point-like foci as well as axicon and light sword optical elements focusing THz radiation into line segments located along the optical axis. We consider diffractive elements in a form of the first and the second order kinoforms having various thicknesses. Designed and fabricated elements were numerically and experimentally examined to verify their achromatic functioning. We present point spread functions (XY scans) and 2D energy maps (XZ scans) for different THz frequencies. Moreover, a diagram of chromatic aberration is created by registering energy distribution along the optical axis for different frequencies. The distance corresponding to the highest energy is chosen for each frequency. Therefore, we can compare broadband working of designed structures. The spherical lens coded as kinoform of the second order provides the best broadband functioning, however it is two times thicker than structures providing extended depth of focus (light sword and axicon) working with slightly smaller efficiency but being much thinner.

Measurements of the responsivity of FET‐based detectors of sub‐THz radiation

Kopyt Paweł, Salski Bartłomiej, Pacewicz Adam, Zagrajek Przemysław, Marczewski Jacek

Opto-Electronics Review

2019

Vol. 27, No. 2

123--129

This article describes a novel approach to measure responsivity of a FET-based sub-THz detector using on-wafer probes to directly feed a bare antenna-less detecting device. Thus, the approach eliminates the need to know beforehand the detector’s effective aperture, which can be a source of large variation between responsivity measurements of various FET-based detectors often cited in the literature. It seems that the presented method can be useful at making direct comparisons between responsivity of various devices (e.g., MOSFETs, HEMTs etc.). As a demonstration, the sub-THz responsivity of a pHEMT device fabricated using a commercial GaAs process has been measured in a WR-3 frequency band. Additionally, the results have been compared against data obtained using an alternative approach. The verification method consisted in integrating exactly the same device with a broad-band antenna and a carefully selected high-resistivity silicon lens and comparing its performance with that of a commercial calibrated detector based on Schottky diodes.