Electron spin resonance of a two-dimensional electron gas in an asymmetric silicon quantum well has been investigated. Applying a small dc current, we observe a shift in the resonance field due to the additional, current induced Bychkov–Rashba type of spin orbit field. We also show that a high frequency current may induce electric dipole spin resonance very efficiently.
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The electron spin resonance (ESR) measurements of the electric-dipole spin resonance (EDSR) of donor-bound electrons in ZnO wurtzite crystals are reported. This phenomenon was measured in longitudinal Voigt geometry (E1 | | B0 c) at low magnetic field and at low microwave frequency. The ESR transitions observed consist of two comparable signals: magnetic dipole spin resonance (MDSR) and electric dipole spin resonance (EDSR).
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An amplitude and a line shape of electrically detected signal of spin resonance are discussed. Since the signal scales with changes of spin polarization under resonance condition it is proportional to longitudinal spin relaxation. The analysis shows that such a method of detection of spin resonance is especially useful for low dimensional semiconductor structures.
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This paper is an attempt to modify the classic Ruderman-Kittel-Kasuya-Yosida (RKKY) model to allow an analysis of the experimental data of the magnetic resonance measurements. In our calculations, we follow the treatment of the original authors of the RKKY model but include the finite band splitting, ?, as a phenomenological parameter. The RKKY exchange is not anymore of Heisenberg type and an anisotropy induced by the direction of carrier magnetization occurs.
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For the last years spin effects in semiconductors have been of great interest not only in the context of solid state physics, but also for their potential usage in technology. In this paper we give a short review of spintronic materials, in which electron spin as an additional degree of freedom is exploited. Afterwards, we discuss the properties of classic, non-magnetic semiconductors, where the efforts are put on enriching the traditional semiconductor technology engaging the electrical effects of spin effects. Various phenomena and scientific state of the art is highlighte
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