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Enhancement of photovoltaic performance of quasi-solid state dye sensitized solar cell with dispersion of a hole conducting agent

Rani S., Shishodia P. K., Mehra R. M.

Materials Science Poland

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2010

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Vol. 28, No. 1

281--294

EN

The presence of a hole conducting agent in a quasi-solid state dye sensitized solar cell (DSSC) may improve cell parameters. The paper reports on the photovoltaic properties of two types of cells, one containing a layer of CuI on a dye coated ZnO electrode (cell A) and the other with CuI dispersed in a gel electrolyte (cell B). The cell A generated a short circuit current density of 7.45 mAocm-2, an open-circuit voltage of 0.56 V, a fill factor of 0.54 and an overall power conversion efficiency of 2.26% under 100 mWocm-2 (air mass: 1.5). In cell B, an enhancement in its performance was observed. The cell showed 2.67% efficiency with a short circuit current density of 8.75 mAocm-2, an open-circuit voltage of 0.59 V and a fill factor of 0.52. The increase in the performance is attributed to the improvement in the hole transport in the electrolyte. The efficiency of cell B was further increased to 3.38% by introducing a compact layer of ZnO 106 nm thick.

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Investigations of highly conducting and transparent Sc doped ZnO films grown by the sol-gel process

Sharma R., Shishodia P. K., Wakahara A., Mehra R. M.

Materials Science Poland

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2009

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Vol. 27, No. 1

225--237

EN

Highly transparent and conductive scandium doped zinc oxide (ZnO/Sc) films were prepared on Corning glass 7059 substrates by the sol-gel technique. The influence of scandium concentration (0-1.5 wt. %) and annealing temperature (300-500 °C) on the structural, optical and electrical properties was investigated. The average transmittance was found to be above 89% in the visible region. ZnO/Sc film having 0.5 wt. % of Sc and annealed at 400 °C exhibited a minimum resistivity of 3.52×10-4 ohmocm. The surface morphology of these films examined by SEM and AFM revealed formation of nano rods.

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Photoinduced degradation in the electrical properties of normally and obliquely deposited As2Se3 thin films

Bhardwaj P., Shishodia P. K., Mehra R. M.

Materials Science Poland

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2007

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Vol. 25, No. 1

69--77

EN

Dark conductivity in As2Se3 films was measured in the temperature range 300-400 K. It was found to be of the doubly activated type in high- and low-temperature ranges. The experimental results were analysed using the Meyer-Neldel rule. The effect of light soaking on the electrical transport properties of normally and obliquely deposited As2Se3 thin films were examined. It has been observed that light soaking results in the degradation of photocurrent, which nearly saturates in an hour. Dark conductivity is fqund to be smaller after light soaking than without it.