The paper presents the results of research on the surface topography and electrical properties of ITO thin films deposited by PVD for applications in silicon photovoltaic cells. The surface condition and chemical composition were characterized using a scanning electron microscope and the thickness and optical constants were measured using a spectroscopic ellipsometer. To compare the impact of the preparation process on the properties of layers, deposition was carried out at three different temperatures: 25, 200, and 400◦C. As the temperature increased, the surface roughness changed, which correlated with the results of structural tests. The crystallite size increased from 11 to 46 nm. This, in turn, reduced the surface resistance. The electrical properties were measured using a four-point probe method and then the prepared solar cells containing ITO thin films in their structure were examined. By controlling the deposition parameters, the surface resistance of the deposited layer (26 Ohm/✷) and the efficiency of the prepared solar cells (18.91%) were optimized. Currently, ITO has the best properties for use in optoelectronics and photovoltaics among the known TCO layers. The magnetron sputtering method is widely used in many industries. Therefore, the authors predict that TCO layers can replace currently used antireflection layers and reduce the number and dimensions of front metal contacts in solar cells.
This paper presents research on the deposition of an indium tin oxide (ITO) layer which may act as a recombination layer in a silicon/perovskite tandem solar cell. ITO was deposited by magnetron sputtering on a highly porous surface of silicon etched by the metal-assisted etching method (MAE) for texturing as nano and microwires. The homogeneity of the ITO layer and the degree of coverage of the silicon wires were assessed using electron microscopy imaging techniques. The quality of the deposited layer was specified, and problems related to both the presence of a porous substrate and the deposition method were determined. The presence of a characteristic structure of the deposited ITO layer resembling a "match" in shape was demonstrated. Due to the specificity of the porous layer of silicon wires, the ITO layer should not exceed 80 nm. Additionally, to avoid differences in ITO thickness at the top and base of the silicon wire, the layer should be no thicker than 40 nm for the given deposition parameters.
The article describes the results of a research on the surface morphology and optical properties of Al₂O₃, ZnO, and TiO₂ thin films deposited by atomic layer deposition (ALD) for applications in silicon solar cells. The surface topography and elemental composition were characterised using a scanning electron microscope, and thickness was determined using an optical reflectometer. The samples were structurally examined using a Raman spectrometer. The structural variant was identified: for Al₂O₃ it is sapphire, for TiO₂ it is anatase, and for ZnO it is wurtzite. Possibilities of minimising light reflection using single and double thin film systems below 5% were presented. For the first time, the effectiveness of these thin films on the current-voltage characteristics and electrical parameters of manufactured silicon solar cells was examined and compared. The solar cell with the highest efficiency of converting solar radiation into electricity was obtained for Al₂O₃/TiO₂ and the efficiency of such a photovoltaic device was 18.74%.
Al₂O₃/TiO₂ thin films were deposited onto monocrystalline silicon surfaces using an atomic layer deposition. Their surface morphology and optical properties were examined for their possible use in solar cells. The surface condition and chemical composition were characterized using a scanning electron microscope and the thickness was measured using a spectroscopic reflectometer. The refractive index and the reflection characteristics were determined. First, the optical properties of the Al₂O₃ thin filmand its influence on recombination in the semiconductor were examined. In this way, it can fulfil a double role in a solar cell. Since reflection reduction was only achieved in a narrow range, it was decided to use the Al₂O₃/TiO₂ system. Thanks to this solution, the light reflection was reduced in a wide range (even below 0.2%).
The technology of manufacturing silicon solar cells is complex and consists of several stages. The final steps in succession are the deposition of antireflection layer and discharge contacts. Metallic contacts are usually deposited by the screen printing method and then, fired at high temperature. Therefore, this article presents the results of a research on the effect of heat treatment on the properties of the Al2O3 thin film previously deposited by the atomic layer deposition method. It works well as both passivating and antireflection coating. Moreover, heat treatment affects the value of the cell short-circuit current and, thus, its efficiency. The surface morphology, optical and electrical properties were investigated, describing the influence of heat treatment on the properties of the deposited layers and the manufactured solar cells.
The main goal of carried out tests were the impact of physicochemical properties of surface layers on the course of processes taking place on the surface of implants made of metallic biomaterials used in the bone system. As a precursor of ZnO, diethylzinc (DEZ) has been used, which reacted with water enabling the deposition of thin films. The chamber temperature was as follows—T = 200°–300 °C. The number of cycles was 500, 1000, and 1500. In the first stage, pitting corrosion test was carried out. Corrosion resistance has been tested under conditions simulating tissue environment. Moreover, the created layers were tested using electrochemical impedance spectroscopy (EIS). The conducted electrochemical tests showed the beneficial effect of the ZnO layer on the substrate made of 316 LVM steel, as evidenced by the obtained parameters describing the corrosion resistance. Furthermore, tests were performed on mechanical properties (scratch test), surface morphology (SEM and AFM method), and physical properties (wettability and thickness layers) for samples with different surface treatments. The investigations of the surface morphology of the applied ZnO layer using the ALD method showed a tendency to inherit the substrate independently of the used application parameters. On the other hand, the tests of adhesion to the substrate showed that the number of cycles of the application process has a fundamental impact on the adhesion of the applied layer to the substrate. Summarizing tests have clearly shown that the number of cycles and temperature in the case of the ZnO coating is significant and positively influences the increase of electrochemical, mechanical, and physical properties of layers.
Titanium dioxide thin films have been deposited on silicon wafers substrates by an atomic layer deposition (ALD) method. There optical parameters were investigated by spectroscopic ellipsometry and UV/VIS spectroscopy. A material with a refractive index of 2.41 was obtained. Additionally, in a wide spectral range it was possible to reduce the reflection from the silicon surface below 5%. The Raman spectroscopy method was used for structural characterization of anatase TiO2 thin films. Their uniformity and chemical composition are confirmed by a scanning electron microscope (SEM) energy dispersive spectrometer (EDS).