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Magnetospectroscopy of double HgTe/CdHgTe QWs with inverted band structure in high magnetic fields up to 30 T

Bovkun L. S., Ikonnikov A. V., Aleshkin V. Y., Maremyanin K. V., Mikhailov N. N., Dvoretskii S. A., Krishtopenko S. S., Teppe F., Piot B. A., Potemski M., Orlita M., Gavrilenko V. I.

Opto-Electronics Review

2019

Vol. 27, No. 2

213--218

Magnetoabsorption in far and mid IR ranges in double HgTe/CdHgTe quantum wells with inverted band structure has been studied in high magnetic fields up to 30 T. Numerous intraband and interband transitions have been revealed in the spectra and interpreted within axial 8 × 8 k·p model. Splitting of dominant magnetoabsorption lines resulting from optical transitions from hole-like zero-mode Landau level has been discovered and discussed in terms of a built-in electric field and collective phenomena.

Field effect transistors for terahertz detection : silicon versus III-V material issue

Knap W., Videlier H., Nadar S., Coquillat D., Dyakonova N., Teppe F., Bialek M., Grynberg M., Karpierz K., Lusakowski J., Nogajewski K., Seliuta D., Kašalynas I., Valušis G.

Opto-Electronics Review

2010

Vol. 18, No. 3

225-230

Resonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation with FETs. Resonant excitation of plasma waves with sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature, plasma oscillations are usually over-damped, but the FETs can still operate as efficient broadband THz detectors. The paper presents the main theoretical and experimental results on detection with FETs stressing their possible THz imaging applications. We discuss advantages and disadvantages of application of III-V GaAs and GaN HEMTs and silicon MOSFETs.