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2 International Journal of Microelectronics and Computer Science

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Analysis in Commutation of a New High Voltage Thyristor Structure for High Temperature

Toulon G., Bourennane A, Isoird K

International Journal of Microelectronics and Computer Science

2013

Vol. 4, nr 2

49--54

In this paper, a high voltage thyristor structure using Schottky contacts on the anode side is analysed through 2D physical simulations in terms of switching performance. The replacement of the P emitter of a conventional symmetrical thyristor by a judicious association of P diffusions and Schottky contacts at the anode side contributes to the reduction of the leakage current in the forward direction and hence improves the forward blocking voltage at high temperature while maintaining its reverse blocking capability. It is shown by comparing this structure with a conventional thyristor, that the presence of Schottky contact does not degrade the turn-on process. It is also shown that the presence of Schottky contact reduces the device turn-off time, improving the maximum operating frequency of the device.

Analysis and optimization of LUDMOS transistors on a 0.18um SOI CMOS technology

Toulon G., Cortés I., Morancho F., Villard B.

International Journal of Microelectronics and Computer Science

2010

Vol. 1, nr 1

3-8

This paper is focused on the design and optimization of power LDMOS transistors (V br > 120 Volts) with the purpose of being integrated in a new generation of Smart Power technology based upon a 0.18 μm SOI-CMOS technology. The benefits of applying the shallow trench isolation (STI) concept along with the 3D RESURF concept in the LDMOS drift region is analyzed in terms of the main static (Ron-sp/Vbr tradeoff) and dynamic (Miller capacitance and QgxRon FOM) characteristics. The influence of some design parameters such as the polysilicon gate electrode length and the STI length are exhaustively analyzed.