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2 Opto-Electronics Review

2 2010

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THz/sub-THz bolometer based on electron heating in a semiconductor waveguide

Dobrovolsky V., Sizov F.

Opto-Electronics Review

2010

Vol. 18, No. 3

250-258

Direct detection THz/sub-THz bolometer is proposed. In it an electromagnetic wave propagates in the bipolar semiconductor waveguide, heats electrons and holes there, and therefore creates their bipolar thermodiffusion flow and, as well as, the electromotive force (emf). The flow causes the carrier excess concentration. Both this concentration and emf are used to get the bolometer response voltage. The bolometer theoretical model is developed. The possibility without cooling or moderate cooling (about 100 K for the Cd₀.₂Hg₀.₈Te bolometers) to get acceptable for applications values of the noise equivalent power is shown. Experimental results confirm the main model conclusions.

Detection of terahertz and sub-terahertz wave radiation based on hot-carrier effect in narrow-gap Hg₁₋xCdxTe

Zabudsky V., Dobrovolsky V., Momot N.

Opto-Electronics Review

2010

Vol. 18, No. 3

300-304

We have proposed and developed terahertz and subterahertz wave detector using hot-carrier effect in narrow-gap Hg₁₋xCdxTe. Epitaxial Hg₁₋xCdxTe -layers were integrated into dipole antennas. The response of Hg₁₋xCdxTeTe hot-electron bolometer was measured in the range of frequencies 0.037-1.58 THz, in the temperature region T = 68-300 K at various bias currents. A bolometer theoretical model was developed and the experimental results confirm the model main conclusions.