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Control of ferromagnetism in Cd1-xMnxTe quantum wells

Tatarenko S., Bertolini M., Maslana W., Boukari H., Gilles B., Cibert J., Ferrand D., Kossacki P., Gaj J. A.

Opto-Electronics Review

2003

Vol. 11, No. 2

133-138

New structures aiming at controlling ferromagnetic properties of diluted magnetic semiconductors quantum wells are presented. The carrier density is monitored by applying voltage in p-i-n diode or adjusting a distance between quantum well and surface. Surface doping was successfully applied to obtain samples with CdMnTe quantum well with up to 9.3% Mn concentration.

Surface strain during homoepitaxy : growth and ion ablation of CdTe

Tatarenko S., Etgens V. H., Hartmann J. M., Martrou D., Arnoult A., Cibert J., Magnea N., Sauvage-Simkin M., Alvarez J., Ferrer S.

Opto-Electronics Review

1999

Vol. 7, No. 2

75-80

Oscillations of the surface lattice parameter were observed by RHEED during the homoepitaxial growth of (001) CdTe by molecular beam epitaxy (MBE) and atomic layer epitaxy (ALE). The oscillations are associated to a deformation, induced by the surface reconstruction, at the free edges of the small 2D islands formed during the growth. In the same way, a lateral relaxation is measured during the layer by layer "de-growth" of (001) CdTe. Experiments using a CCD X-ray sensitive camera combined with the very bright X-ray beam offered by the European Synchrotron Radiation Facility allowed us to investigate the two layers behaviour of the CdTe surface in real time during the ablation by ion sputtering. The results show a relaxation mechanism, which is effective only whem islands are presented on the surface. A correlation has been found between the size the islands, their distribution, and the surface reconstruction. Particularly, a long-distance correlation between islands along the [1-10] direction has been observed.