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Spectroscopic studies of Er-doped Si-rich silicon oxide/SiO2 multilayers

Gourbilleau F., Dufour C., Madelon R., Rizk R.

Optica Applicata

2007

Vol. 37, nr 1-2

21-30

The effects of Si nanocluster (Si-nc) size and of the distance between Si-nc and Er ion on the photoluminescence of the Er3+ ions have been investigated by means of appropriate multilayer configurations fabricated by reactive magnetron sputtering. On the one hand, the effect of Si-nc size is studied in Er-Si-rich SiO2/SiO2 multilayers. The coupling between Si-nc and Er3+ ions is found to be less efficient when the Si-nc?s reach a size of 5 nm and attributed to a loss of the quantum confinement of carriers. On the other hand, the interaction distance between Si-nc and Er ions is determined through the photoluminescence properties of Si-rich SiO2/Er-SiO2 multilayers. The characteristic interaction distance Si-nc-Er is dependent on the nature of the sensitizers with 0.4 ą 0.1 nm for amorphous Si and 2.6 ą 0.4 nm for Si nanocrystals.

Photoluminescence study of Nd3+-doped Si-rich silica films

Breard D., Gourbilleau F., Belarouci A., Dufour C., Rizk R.

Optica Applicata

2006

Vol. 36, nr 2-3

187-192

Nd3+-doped silicon-rich silicon oxide thin films have been fabricated by reactive magnetron co-sputtering of a pure silica target topped with Nd2O3 chips. The incorporation of silicon excess in the films has been controlled by the hydrogen partial pressure PH2 introduced in the plasma. Photoluminescence experiments have been made at room temperature using a non resonant excitation with Nd3+ ions. The influences of Nd3+ content and PH2 have been studied to improve the Nd3+ emission. Photoluminescence spectra reveal an enhancement of the Nd3+ emission at 0.9 m and 1.1 m when silicon nanoclusters and Nd3+ are embedded in a SiO2 matrix.