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Performance analysis of an InAs/GaSb superlattice barrier photodetector covering the full LWIR spectral domain

Alchaar Rodolphe, Rodriguez Jean-Baptiste, Höglund L., Naureen Shagufta, Costard Eric, Christol Philippe

Opto-Electronics Review

2020

Vol. 28, No. 3

164--170

In this paper, we present the electrical and electro-optical characterizations of an InAs/GaSb type-2 superlattice barrier photodetector operating in the full longwave infrared spectral domain. The fabricated detectors exhibited a 50% cut-off wavelength around 14 μm at 80 K and a quantum efficiency slightly above 20%. The dark current density was of 4.6×10⁻² A/cm² at 80 K and a minority carrier lateral diffusion was evaluated through dark current measurements on different detector sizes. In addition, detector spectral response, its dark current-voltage characteristics and capacitance-voltage curve accompanied by electric field simulations were analyzed in order to determine the operating bias and the dark current regimes at different biases. Finally, dark current simulations were also performed to estimate a minority carrier lifetime by comparing experimental curves with simulated ones.