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Content available remote Topological insulators based on the semi-metallic HgCdTe
EN
The review of peculiarity of growth and experimental results of the magneto-transport measurements (longitudinal magneto-resistance Rxx and the Hall resistance Rxy) over a wide interval of temperatures for several samples of Hg1−xCdxTe (x ≈ 0.13–0.15) grown by MBE is presented in this paper. An amazing temperature stability of the SdH-oscillation period and amplitude is observed in the entire temperature interval of measurements up to 50 K. Moreover, the quantum Hall effect (QHE) behaviour of the Hall resistance was shown in the same temperature interval. These peculiarities of the Rxx and Rxy for strained thin layers are interpreted using quantum Hall conductivity (QHC) on topologically protected surface states (TPSS). In the case of not strained layers it is assumed that the QHC on the TPSS contributes also to the conductance of the bulk samples. The experimental results on magneto-transport (QHC and SdH) obtained for the strained 100 nm thickness Hg1−xCdxTe layer are interpreted on the basis of the 8 × 8 kp model and an advantage of the Hg1−xCdxTe as topological insulators is shown. This article is an expanded version of the scientific reports presented at the International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors 2016 ICSeNOB2016, May 22–25, 2016, Rzeszow, Poland.
EN
In this paper the external magnetic stray field is investigated in transformers realized on gapped toroids with a rectangular cross section. An analytical method is used in which the field distribution is calculated by means of orthogonal expansion. As a conclusion it is shown that optimum EMC design for the case of a flyback converter is given by the results for a simple inductor. In case of a load resonant converter minimum parasitic induction is obtained, if the winding conducting maximum current is located exactly above the air gap. The second winding has to be located as close as possible to the first one with respect to the desired value of the total leakage inductance.
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