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1 2005

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Deep centers in InGaAs/InP layers grown by molecular beam epitaxy

Kowalczyk A. E., Ornoch L., Muszalski J., Kaniewski J., Bąk-Misiuk J.

Optica Applicata

2005

Vol. 35, nr 3

457-463

The deep level transient spectroscopy (DLTS) method was applied to study deep centers in lattici mismatched InGaAs/InP layers grown by molecular beam epitaxy. The composition and the strair state of the layers were determined using X-ray diffraction technique. Electron trap with therma; activation energy Ec - (0.06 + 0.03) eV and electron capture cross-section b(beta)e = 9.0x10-19 cm-2 have been detected in In0.524Ga0.476As layers being under tensile strain. Additionally two other centers with thermal activation energy Ec - (0.10 š 0.02) eV, and Ec - (0.48 š 0.02) eV have been revealed in In0.533Ga0.467As/InP layers subjected to small compressive strain. The electron capture cross-sections of these traps, determined from emission processes, are equal to be = 6.7x10-18 cm-2 and be= 1.6x10-14 cm-2, respectively. Due to temperature stresses, defect states in the In0.533Ga0.467As/InP layers are modified and the center Ec - (0.06 š 0.03) eV is created. This center is identical to that observed in In0.524Ga0.476gAs layers, as it has been confirmed by electron capture process measurements. The Ec - (0.06 š 0.03) eV state exhibits a point-like defect character.