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1 2010

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Transport studies of MBE-grown InAs/GaSb superlattices

Szmulowicz F., Haugan H. J., Elhamri S., Brown G. J., Mitchel W. C.

Opto-Electronics Review

2010

Vol. 18, No. 3

267-270

We report on the results of transport studies of MBE-grown InAs/GaSb superlattices. We demonstrate that the in-plane mobility is limited by interface roughness scattering by showing that, as a function of InAs layer width L, the in-plane mobility behaves as μ ∝ L5.3, which closely follows the classic sixth power dependence expected from theory for interface-roughness-limited mobility. Fits to the mobility data indicate that, for one monolayer surface roughness, the roughness correlation length is about 35 Å. Next, we show that the in-plane carrier mobility in InAs/GaSb superlattices is inversely proportional to carrier density in n- and p-type samples, the result of screened interface roughness scattering.