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Deposition time and annealing effects on morphological and optical properties of ZnS thin films prepared by chemical bath deposition

Chabou N., Birouk B., Aida M. S., Raskin J. P.

Materials Science Poland

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2020

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Vol. 38, No. 4

508--517

EN

Nanocrystalline zinc sulfide (ZnS) thin films are prepared on glass substrates by chemical bath deposition (CBD) method using aqueous solutions of zinc chloride, thiourea ammonium hydroxide along with non-toxic complexing agent tri-sodium citrate in alkaline medium at 80 °C. The deposition time and annealing effects on the optical and morphological properties are studied. The morphological, compositional, and optical properties of the films are investigated by scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDAX) and UV-Vis spectroscopy. SEM micrographs exhibit uniform surface coverage. UV-Vis (300 nm to 800 nm) spectrophotometric measurements show transparency of the films (transmittance ranging from 69 % to 81 %), with a direct allowed energy band gap in the range of 3.87 eV to 4.03 eV. After thermal annealing at 500 °C for 120 min, the transmittance increases up to 87 %.

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Deposition time and annealing effects on morphological and optical properties of ZnS thin films prepared by chemical bath deposition

Chabou N., Birouk B., Aida M. S., Raskin J. P.

Materials Science Poland

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2019

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Vol. 37, No. 3

404--416

EN

Nanocrystalline zinc sulfide thin films were prepared on glass substrates by chemical bath deposition method using aqueous solutions of zinc chloride, thiourea ammonium hydroxide along with non-toxic complexing agent trisodium citrate in alkaline medium at 80 °C. The effect of deposition time and annealing on the properties of ZnS thin films was investigated by X-ray diffraction, scanning electron microscopy, optical transmittance spectroscopy and four-point probe method. The X-ray diffraction analysis showed that the samples exhibited cubic sphalerite structure with preferential orientation along 〈2 0 0〉 direction. Scanning electron microscopy micrographs revealed uniform surface coverage, UV-Vis (300 nm to 800 nm) spectrophotometric measurements showed transparency of the films (transmittance ranging from 69 % to 81 %), with a direct allowed energy band gap in the range of 3.87 eV to 4.03 eV. After thermal annealing at 500 °C for 120 min, the transmittance increased up to 87 %. Moreover, the electrical conductivity of the deposited films increased with increasing of the deposition time from 0.35 × 10−4 Ω·cm−1 to 2.7 × 10−4 Ω·cm−1.

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Nanostructured device based on coated ZnO layer as a window in solar cell applications

Mokhtari H., Benhaliliba M., Boukhachem A., Aida M. S., Ocak Y. S.

Materials Science Poland

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2018

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Vol. 36, No. 4

570--583

EN

This work highlights some physical properties related to the influence of aluminum, tin and copper incorporation on nanostructured zinc oxide (ZnO:M; M:Al, Sn and Cu) thin films prepared by ultrasonic spray pyrolysis technique (USP) on glass substrate at 350±5 °C. For the as-grown layers, M- to Zn-ratio was fixed at 1.5 %. The effects of metal doping on structural, morphological, optical and electrical properties were investigated. X-ray diffraction pattern revealed that the as-prepared thin films crystallized in hexagonal structure with (0 0 2) preferred orientation. The surface topography of the films was performed by atomic force microscopy. AFM images revealed inhibition of grain growth due to the doping elements incorporation into ZnO matrix, which induced the formation of ZnO nanoparticles. Optical measurements showed a high transparency around 90 % in visible range. Some optical parameters, such as optical band gap, Urbach energy, refractive index, extinction coefficient and dielectric constant were studied in terms of doping element. Particularly, dispersion of refractive index was discussed in terms of both Cauchy and single oscillator model proposed by Wemple and DiDomenico. Cauchy parameters and single oscillator energy E0 as well as dispersion energy Ed were calculated. Finally, electrical properties were investigated by means of electrical conductivity and Hall effect measurements. The measurements confirmed n type conductivity of the prepared thin films and a good agreement between the resistivity values and the oxidation number of doping element. The main aim of this work was the selection of the best candidate for doping ZnO for optoelectronics applications. The comparative study of M doped ZnO (M:Al, Sn and Cu) was performed. High rectifying efficiency of the Al/n-ZnO/p-Si/Al device was achieved and non-ideal behavior was revealed with n > 4.