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Dynamic characteristics of gain-coupled ingaasp laser diodes and their reliability

Šermukšnis E., Vyšniauskas J., Palenskis V., Matuskas J., Pralgauskait S.

Kwartalnik Elektroniki i Telekomunikacji

2004

Vol. 50, z. 4

591-603

Dynamic characteristics of partly gain-coupled multiple-quantum-well InGaAsP distributed feedback laser diodes have been investigated. Basic dynamic parameters (differential gain, K-factor, differential carrier lifetime) were found out. It is shown that the increase of coupling coefficient results not only in both oscillation and damping frequency increasing, but also in time-resolved frequency chirp oscillation decreasing. Relation between K-factor and differential carrier lifetime and their correlation with differential gain indicates essential differential gain role in dynamic parameter variance. A possibility to simulate the modulation characteristics of partly gain-coupled distributed feedback laser diodes using simple rate equations for carrier and photon density has been shown. Chirp and optical power pulses obtained by time-resolved frequency chirp measurements were compared with modelled ones.

Reliability and low-frequency noise measurements of InGaAsP MQW buried-heterostructure lasers

Pralgauskaite S., Matukas J., Palenskis V., Šermukšnis E., Vyšniauskas J., Letal G., Mallard R., Smetona S.

Journal of Telecommunications and Information Technology

2003

nr 1

24-29

A laser diode reliability test based on the measurements of the low-frequency optical and electrical noise, and their correlation factor changes during short-time ageing is presented. The noise characteristics reveal obvious differences between the stable and unreliable lasers operated near the threshold region. An excessive Lorentzian type noise with negative correlation factor at the threshold could be one of the criteria for identifying unreliable lasers. The behavior of unreliable lasers during ageing could be explained by migration of point recombination centres at the interface of an active layer, and by the formation of defect clusters.