The homemade MBE03 system for III group nitrides growth by molecular beam epitaxy is described. The MBE03 system is used for gallium, indium and aluminium nitrides growth with ammonia as the nitrogen gas source. The growing layer can be doped by magnesium (type p) and silicon (type n).
Urządzenie MBE03 przeznaczone jest do wytwarzania warstw azotków takich metali jak: aluminium, gal i ind. Jako źródło azotu zastosowano amoniak. Istnieje także możliwość domieszkowania wytwarzanych warstw magnezem (domieszka typu p) i krzemem (domieszką typu n).
EN
The homemade MBE03 system for III group nitrides growth by molecular beam epitaxy is described. The MBE03 system is used for gallium, indium and aluminium nitrides growth with ammonia as the nitrogen gas source. The growing layer can be doped by magnesium (type p) and silicon (type n).
The construction of the MBE system for growth the semiconductor thin film in the high and ultra high vacuum conditions has been presented. This system consists of mainly technological and loading chambers with technical equipments for operation the epitaxy process. To the pumping of the chambers the turbomolecular with diaphram pumps and the ion pumps are used.
We have investigated structural and optical properties of cubic GaN (beta-GaN) layers grown on SiC/Si(001) substrates by electron cyclotron resonance assisted molecular beam epitaxy (ECR-MBE) using several methods (RHEED, TEM, AFM, XRD, PL). The about 50 nm thick beta-SiC layers were formed firstly by the thermal annealing of Si(OO1) wafers in vacuum at initial pressure 1x10(-5) mbar. Then the GaN layers have been grown on SiC/Si structures with the growth ratę of 50-60 nm/h. It is established that GaN growth takes place in the three-dimensional mode and the final GaN layers are preferably of cubic orientation. The fraction of included hexagonal GaN phase is found to be negligible. The PL spectra of 250 mn thick beta-GaN exhibit emission in both blue and yellow ranges.
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