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2 Optica Applicata

2 2020

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The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE

Łozińska Adriana, Badura Mikołaj, Bielak Katarzyna, Ściana Beata, Tłaczała Marek

Optica Applicata

2020

Vol. 50, nr 2

251--256

In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In0.53Ga0.47As/Al0.48In0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures.The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.

Photoluminescence and Raman spectroscopies as an optical approach of stress determining in MOVPE grown quantum cascade laser structures

Łozińska Adriana, Badura Mikołaj, Jadczak Joanna, Bielak Katarzyna, Ściana Beata

Optica Applicata

2020

Vol. 50, nr 2

289--299

In the presented work, an optical approach of stress determining in metalorganic vapor phase epitaxy (MOVPE) grown quantum cascade laser (QCL) structures was reported. In the case of such sophisticated structures containing hundreds of thin layers, it is important to minimize the stress generated in the QCL core. Techniques enabling determination of stress in such thin layers as those described in the article are photoluminescence and Raman spectroscopies. Based on Raman shift or changes in photoluminescence signal, it is possible to analyze stress occurring in the structure.