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Background donor concentration in HgCdTe

Izhnin I. I., Mynbaev K. D., Voitsekhovsky A. V., Korotaev A. G., Fitsych O. I., Pociask-Bialy M., Dvoretsky S. A.

Opto-Electronics Review

2015

Vol. 23, No. 3

200-207

Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors. In bulk crystals, films grown with liquid phase epitaxy and films fabricated with molecular beam epitaxy (MBE) on Si substrates, BDC of the order of ~10¹⁴ cm⁻³ was revealed. Films grown with metal-organic chemical vapour deposition and with MBE on GaAs substrates showed BDC of the order of ~10¹⁵ cm⁻³. A possibility of assessing the BDC in acceptor (arsenic)-doped HgCdTe was demonstrated. In general, the studies showed the effectiveness of ion milling as a method of reducing electrical compensation in n-type MCT and as an excellent tool for assisting evaluation of BDC.

Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs

Izhnin I. I., Izhnin A. I., Mynbaev K. D., Bazhenov N. L., Shilyaev A. V., Mikhailov N. N., Varavin V. S., Dvoretsky S. A., Fitsych O. I., Voitsekhovsky A. V.

Opto-Electronics Review

2013

Vol. 21, No. 4

390-394

Photoluminescence (PL) of HgCdTe-based hetero-epitaxial nanostructures with 50 to 1100 nm-wide potential wells was studied. The nanostructures were grown by molecular beam epitaxy on GaAs substrates. A strong degree of alloy disorder was found in the material, which led to the broadening of the PL spectra and a considerable Stokes shift that could be traced up to temperature T~230 K. Annealing of the structures improved the ordering and led to the increase in the PL intensity. A remarkable feature of the PL was an unexpectedly small decrease of its intensity with temperature increasing from 84 to 300 K. This effect can be related to localization of carriers at potential fluctuations and to the specific character of Auger-type processes in HgCdTe-based nanostructures.