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A SiGe bipolar WCDMA power amplifier with 52% PAE at 3.3 V

Kitlinski K., Donig G., Bakalski W., Kapfelsperger B., Weigel R.

Kwartalnik Elektroniki i Telekomunikacji

2004

Vol. 50, z. 4

539-551

A monolithic radio frequency power amplifier for WCDMA handheld applications has been fabricated in a 0.35 um, 40 GHz fT - volume production SiGe bipolar technology. The process technology features a doped ground connection for on-chip devices to improve the overall performance. At 3.3 V supply voltage saturated output power of 29 dBm with a PAE of 52% has been achieved; simultaneously OP1 dB reaches 28 dBm and the small signal gains is 32 dB.

Continuous System-Level Modeling and Simulation Process For Early EMC Design of Automotive Applications

Neumayer R., Haslinger F., Weigel R.

Przegląd Elektrotechniczny

2003

R. 79, nr 10

664-667

An early detection of potential EMC problems in the development process of new automobiles is becoming increasingly important to the car industry. In this paper a continuous EMC simulation process based on the exchange of EMC behavior models between car manufacturer, electronic supplier and IC developer is presented. The described process fundamentally influences the introduction of new technologies in automobiles by cutting the risk of EMC failure and avoiding expensive and time-consuming redesigns.