In order to decrease reflectivity of silicon solar cells, NaOH or KOH texturisations are usually used leading to a pyramidal structure. However, these solutions are toxic and pollutant. Effectively, K+ or Na+ ions contaminate the passivation layer (SiO2 or SiN) deposited on the surface of the cell after texturisation. An alternative to KOH and NaOH texturisation is tetramethyl ammonium hydroxyde (CH3)4NOH) (TMAH). TMAH is not pollutant, not toxic and its use leads also to a pyramidal structure. Moreover, the etching rate and surface morphology can be controlled by the concentration of the solution, temperature and the addition of surfactant. Moreover, TMAH is selective with dielectrics and metals. It can therefore be used to produce self-aligned interdigitated back-contact solar cells (IBC). In this work, we have analysed the surface morphology and reflectivity after texturisation in TMAH in various experimental conditions. We have tested the possibility to use selective etching of the emitter of a back-contact solar cell by protecting the surface of the emitter with a metal grid. This new process permits to reduce the number of lithographic steps necessary to produce IBC solar cells.
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