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Simulation framework and thorough analysis of the impact of barrier lowering on the current in SB-MOSFETs

Schwarz M., Calvet L. E., Snyde J. P., Krauss T., Schwalke U., Kloes A.

International Journal of Microelectronics and Computer Science

2017

Vol. 8, nr 2

72--79

In this paper we present a simulation framework to account for the Schottky barrier lowering models in SBMOSFETs within the Synopsys TCAD Sentaurus tool-chain. The improved Schottky barrier lowering model for field emission is considered. A strategy to extract the different current components and thus accurately predict the on- and off-current regions are adressed. Detailed investigations of these components are presented along with an improved Schottky barrier lowering model for field emission. Finally, a comparison for the transfer characteristics is shown for simulation and experimental data.

Rapid NEGF-based calculation of ballistic current in ultra-short DG MOSFETs for circuit simulation

Hosenfeld F., Horst F.., Graef M., Farokhnejad A., Kloes A., Iniguez B., Lime F.

International Journal of Microelectronics and Computer Science

2016

Vol. 7, nr 2

65--72

Shrinking gate length in conventional MOSFETs leads to increasing short channel effects like source-to-drain (SD) tunneling. Compact modeling designers are challenged to model these quantum mechanical effects. The complexity lies in the set-up between time efficiency, physical model relation and analytical equations. Multi-scale simulation bridges the gap between compact models, its fast and efficient calculation of the device terminal voltages, and numerical device models which consider the effects of nanoscale devices. These numerical models iterate between Poisson- and Schroedinger equation which significantly slows down the simulation performance. The physicsbased consideration of quantum effects like the SD tunneling makes the non-equilibrium Green’s function (NEGF) to a stateof-the-art method for the simulation of devices in the sub 10 nm region. This work introduces a semi-analytical NEGF model for ultra-short DG MOSFETs. Applying the closed-form potential solution of a classical compact model, the model turns the NEGF from an iterative numerical solution into a straightforward calculation. The applied mathematical approximations speed up the calculation time of the 1D NEGF. The model results for the ballistic channel current in DG-MOSFETs are compared with numerical NanoMOS TCAD [1] simulation data. Shown is the accurate potential calculation as well as the good agreement of the current characteristic for temperatures down to 75 K for channel lengths from 6 nm to 20 nm and channel thickness from 1.5 nm to 3 nm.

Two-Dimensional Analytical Model for Channel Lenght Modulation in Lightly-Doped DG FETs

Weidemann M., Kloes A., Schwarz M., Iniguez B.

Electronics and Telecommunications Quarterly

2009

Vol. 55, No 4

549-562

With this paper we publish a possibility to calculate the shortening of the channel in SOI DoubleGate FETs operating in saturation with a 2D analytical solution of Poisson's equation. The model inherently includes 2D effects by solving the differential equation with conformai mapping technique and does not introduce unphysical fitting parameters. Also these fitting parameters have only a minor influence on the model results. We compared our model to numerical data based on TCAD Sentaurus simulations and it is in good agreement with the results.