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Influence of powerful laser radiation on formation of pores in Si by electrochemical etching

Medvid A., Onufrijevs P., Fedorenko L., Yusupov M., Dauksta E.

Journal of Automation Mobile Robotics and Intelligent Systems

2009

Vol. 3, No. 4

166-168

The influence of strongly absorbing N2 laser radiation on pores formation on a surface of Si single crystal has been investigated using optical microscope and atomic force microscope. After irradiation by the laser and subsequent electrochemical etching in HF acid solution morphological changes of the irradiated parts of a surface of Si were observed. At the same time, pores formation on the nonirradiated parts of Si surface took place. The porous part of the Si surface is characterized by strong photoluminescence in red part of spectra with maximum at 1.88 eV. Suppression of the pores formation by laser radiation is explained with inversion of Si type condition from p to n. This fact is explained by Thermogradient effect - generation and redistribution of the intrinsic defects in gradient of temperature. It was shown that the depth of p-Si layer on n-Si ubstrate depends on intensity of laser radiation and it increases with intensity of laser radiation. The results of the investigation can be used for optical recording and storage of information on surface of semiconductors.