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InP nanowires quality control using SEM and Raman spectroscopy

Grodecki K., Dumiszewska E., Romaniec M., Strupinski W.

Materials Science Poland

2016

Vol. 34, No. 4

851--855

Three different types of samples of InP nanowires, i.e. undoped, doped with Si and doped with Te, were grown and measured using SEM and Raman spectroscopy. Scanning Electron Microscope (SEM) images showed differences in the length, homogeneity and curvature of the nanowires. The most homogenous wires, grown most perpendicular to the surface, were those Si doped. They were also the shortest. Raman spectroscopy showed that the nanowires doped with Si had the lowest Full Width at Half Maximum (FWHM) TO band, which suggests the highest crystal quality of these wires. For the wires doped with Te, which were the most inhomogeneous, a low energy acoustic band was also observed, which suggests the lowest crystal quality of these structures.

The sensibility of resistance sensor structures with graphene to the action of selected gaseous media

Pustelny T., Setkiewicz M., Drewniak S., Maciak E., Stolarczyk A., Urbańczyk M., Procek M., Gut K., Opilski Z., Pasternak I., Strupinski W.

Bulletin of the Polish Academy of Sciences. Technical Sciences

2013

Vol. 61, nr 2

293--300

The paper presents resistance sensor structures with a graphene sensing layer. The structures were tested concerning their sensitivity to the affects of hydrogen, nitrogen dioxide and steam in an atmosphere of a synthetic air. Investigations have proved that resistance structures with a graphene layer are sensitive to the presence of the tested gases. The resistance of the structures amounted to about 10Ω, whereas changes in the resistances affected by the external gaseous medium were contained within the range of a several mΩ. The investigations confirmed that the resistance structures with graphene exposed to the affect of hydrogen in atmosphere of synthetic air change their resistances practically at once (within the order of only a few seconds). This indicates that such structures might be practically applied in sensors of hydrogen ensuring a short time of response.

Problems with creaking of Alx Ga 1-x N layers

Dumiszewska E., Lenkiewicz D., Strupinski W., Jasik A., Jakiela R. S., Wesolowski M.

Optica Applicata

2005

Vol. 35, nr 1

111-115

Alx Ga 1-x N a wide band-gap material, which can be used for manufacture of UV detectors. Unfortunately, there are problems with the cracing of those layers occurring above some critical thickness, which is a bit smalle from the one used for detectors (about 1 um). Our investigation concentrated on the causes of crack formation. to avoig it we used so-called special AIN nucleation layer, which was to stop the relaxation. We obtained a strained layer free of cracking, but with a very big number of dislocations. We compared dislocation densities of strained and relaxed Al 0.4 Ga 0.6 N layers. The first one was chracterized by a higher dilocation density than the second one. We also inyestigated the problem with cracking occurring in Al 0.4 Ga 0.6 N epitaxial layers during the doping, and how to control this process. The relaxation of the layers started for very low impurity densities and went on when we increased the amount of the dopant.