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1 2010

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Ta-doped In2O3 transparent conductive films with high transmittance and low resistance

Wang B., Hu L. M., Liu F. M., Qin L., Liu Y., Wang L. J.

Optica Applicata

2010

Vol. 40, nr 1

25--31

Ta-doped In2O3 transparent conductive oxide (TCO) thin films are deposited on glass substrates by radio-frequency (RF) sputtering at room-temperature. The influence of sputtering power on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 2.8×10-4 ?cm is obtained from the film deposited at the sputtering power of 170 W. The average optical transmittance of the films is over 90%.