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Current Fluctuation Measurements of Amperometric Gas Sensors Constructed with Three Different Technology Procedures

Sedlak P., Kubersky P., Skarvada P., Hamacek A., Sedlakova V., Majzner J., Nespurek S., Sikula J.

Metrology and Measurement Systems

2016

Vol. 23, nr 4

531--543

Electrochemical amperometric gas sensors represent a well-established and versatile type of devices with unique features: good sensitivity and stability, short response/recovery times, and low power consumption. These sensors operate at room temperature, and therefore have been applied in monitoring air pollutants and detection of toxic and hazardous gases in a number of areas. Some drawbacks of classical electrochemical sensors are overcome by the solid polymer electrolyte (SPE) based on ionic liquids. This work presents evaluation of an SPE-based amperometric sensor from the point of view of current fluctuations. The sensor is based on a novel three-electrode sensor platform with solid polymer electrolytes containing ionic liquid for detection of nitrogen dioxide − a highly toxic gas that is harmful to the environment and presenting a possible threat to human health even at low concentrations. The paper focuses on using noise measurement (electric current fluctuation measurement) for evaluation of electrochemical sensors which were constructed by different fabrication processes: (i) lift-off and drop-casting technology, (ii) screen printing technology on a ceramic substrate and (iii) screen printing on a flexible substrate.

Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots

Bielecka U., Lutsyk P., Nyk M., Janus K., Samoc M., Bartkowiak W., Nespurek S.

Materials Science Poland

2013

Vol. 31, No. 2

288--297

Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the concentration of QDs on charge transport in the hybrid material was studied. The influence of the QDs capping ligand on charge transport parameters was investigated by replacing the conventional trioctylphosphine oxide (TOPO) surfactant with pyridine to provide closer contact between the organic and inorganic components. Electrical parameters of FETs with an active layer made of P3HT:CdSe QDs blend were determined, showing field-effect hole mobilities up to 1.1×104 cm2 /Vs. Incorporation of TOPO covered CdSe QDs decreased the charge carrier mobility while the pyridine covered CdSe QDs did not alter this transport parameter significantly.

Contribution of dipolar species to the formation of local states for charge carriers in molecular materials

Sworakowski J., Nespurek S.

Polish Journal of Chemistry

1998

Vol. 72, nr 2

163-171

Effect of polar impurities on transport of charge carriers in non-polar molecular materials is reviewed. The presence of such species gives rise to structural traps. Calculations of local values of the polarization energy in the vicinity of dipolar defect show that traps as deep as several tenths of eV are created. If the polar impurity molecule can act as a trap itself, at high fields one may expect a dipole analogue of the Poole-Frenkel effect, the lowering of the trap depth following, however, a different dependence on the biasing electric field: Delta Et alpha F2/3. Moreover, the dipole-charge interactions contribute to the broadening of local transport states density in disordered materials.