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Rigorous optical modelling of long-wavelength infrared photodetector with 2D subwavelength hole array in gold film

Janaszek Andrzej, Wróbel Piotr, Dems Maciej, Ceylan Omer, Gurbuz Yasar, Kubiszyn Łukasz, Piotrowski Józef, Kotyński Rafał

Opto-Electronics Review

2024

Vol. 32, No. 1

art. no. e148831

The quantum efficiency of an InAs/InAsSb type-II superlattice (T2SL) high operating temperature (HOT) long-wavelength infrared (LWIR) photodetector may be significantly improved by integrating a two-dimensional subwavelength hole array in a metallic film (2DSHA) with the detector heterostructure. The role of the metallic grating is to couple incident radiation into surface plasmon polariton (SPP) modes whose field overlaps the absorber region. Plasmon-enhanced infrared photodetectors have been recently demonstrated and are the subject of intensive research. Optical modelling of the three-dimensional detector structure with subwavelength metallic components is challenging, especially since its operation depends on evanescent wave coupling. Our modelling approach combines the 3D finite-difference time-domain method (FDTD) and the rigorous coupled wave analysis (RCWA) with a proposed adaptive data-point selection for calculation time reduction. We demonstrate that the 2DSHA-based detector supports SPPs in the Sommerfeld-Zenneck regime and waveguide modes that both enhance absorption in the active layer.

Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern

Boguski Jacek, Wróbel Jarosław, Złotnik Sebastian, Budner Bogusław, Liszewska Malwina, Kubiszyn Łukasz, Michałowski Paweł P., Ciura Łukasz, Moszczyński Paweł, Odrzywolski Sebastian, Jankiewicz Bartłomiej, Wróbel Jerzy

Opto-Electronics Review

2023

Vol. 31, Special Issue

art. no. e144564

The article presents the results of diameter mapping for circular-symmetric disturbance of homogeneity of epitaxially grown InAs (100) layers on GaAs substrates. The set of acceptors (beryllium) doped InAs epilayers was studied in order to evaluate the impact of Be doping on the 2-inch InAs-on-GaAs wafers quality. During the initial identification of size and shape of the circular pattern, non-destructive optical techniques were used, showing a 100% difference in average roughness between the wafer centre and its outer part. On the other hand, no volumetric (bulk) differences are detectable using Raman spectroscopy and highresolution X-ray diffraction. The correlation between Be doping level and circular defect pattern surface area has been found.

Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice

Kopytko Małgorzata, Gomółka Emilia, Manyk Tetiana, Michalczewski Krystian, Kubiszyn Łukasz, Rutkowski Jaroslaw, Martyniuk Piotr

Opto-Electronics Review

2021

Vol. 29, No. 1

1--4

Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.