PL
 |
EN
Preferencje help
Polish version English version Język
Widoczny [Schowaj] Abstrakt
Liczba wyników

Znaleziono wyników: 5

Liczba wyników na stronie
first rewind previous Strona / 1 next fast forward last
Wyniki wyszukiwania
help Sortuj według:

help Ogranicz wyniki do:
first rewind previous Strona / 1 next fast forward last
1
Content available remote Application of spatially resolved thermoreflectance for the study of facet heating in high power semiconductor lasers
Bugajski M., Ochalski T., Piwonski T., Wawer D.
Optica Applicata
|
2006
|
Vol. 36, nr 2-3
339-349
EN
We have developed a new technique for monitoring the facet heating in semiconductor lasers and for correlating these measurements with the performance and reliability of the device. The method is based on thermoreflectance, which is a modulation technique relying on periodic facet temperature modulation induced by pulsed current supply of the laser. The periodic temperature change of the laser induces variation of the refractive index and consequently modulates the probe beam reflectivity. The technique has a spatial resolution of about 1 m and temperature resolution better than 1 K, and can be used for temperature mapping over a 300 m × 300 m area. It can be applied to any kind of edge emitting lasers or laser bars. The technique is crucial for understanding the thermal behavior of a device.
2
Content available remote Thermoreflectance study of temperature distribution on the semiconductor laser mirrors
Piwoński T., Wawer D., Szymański M., Ochalski T., Bugajski M.
Optica Applicata
|
2005
|
Vol. 35, nr 3
611-617
EN
In the high power semiconductor lasers, the surface of the mirror is the key element of the construction, which has the main impact on the reliability and degradation processes. In the case of lasers fabricated with the use of GaAs compounds the highest power emitted by the structure is limited by the catastrophic optical damage (COD) effect due to increase of temperature on the air-semiconductor edge. The technique which enables examining the temperature distribution on the mirror surface is thermoreflectance. In this paper, we present the technique of temperature mapping on the mirror surface of the high power semiconductor lasers based on the thermoreflectance method.
3
Content available remote High power QW SCH InGaAs/GaAs lasers for 980-nm band
Bugajski M., Mroziewicz B., Regiński K., Muszalski J., Kosiel K., Zbroszczyk M., Ochalski T., Piwoński T., Wawer D., Szerling A., Kowalczyk E., Wrzesińska H., Górska M.
Bulletin of the Polish Academy of Sciences. Technical Sciences
|
2005
|
Vol. 53, nr 2
113-122
EN
Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980-nm, broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation and ridge waveguide construction. Threshold current densities of the order of Jth = 280 A/cm2 (for the resonator length L = 700 [mu]m) and differential efficiency [eta]= 0.40 W/A (41%) from one mirror were obtained. The record wall-plug efficiency for AR/HR coated devices was equal to 54%. Theoretical estimations of above parameters, obtained by numerical modelling of devices were Jth = 210 A/cm and [eta] = 0.47 W / A from one mirror, respectively. Degradation studies revealed that uncoated and AR/HR coated devices did not show any appreciable degradation after 1500 hrs of CW operation at 35°C heat sink temperature at the constant optical power (50 mW) conditions.
4
Content available remote Optical gain saturation effects in InAs/GaAs self-assembled quantum dots
Wasiak M., Bugajski M., Machowska-Podsiadło E., Ochalski T., Kątcki J., Sarzała R.P., Maćkowiak P., Czyszanowski T., Nakwaski W., Chen J. X., Oesterle U., Fiore A., Ilegems M.
Optica Applicata
|
2002
|
Vol. 32, nr 3
291-299
EN
An attempt has been made to understand electronic structure and optical (lasing) properties of self-assembled InAs/GaAs quantum dots (QD) and to describe saturation effects in QD levels population. The new, improved rate equation model has been developed. The impact of carrier relaxation and level depopulation inside quantum dots on lasing properties, in particular on gain depressing, is discusse.
5
Content available remote Strained layer SCH SQW InGaAs/GaAs lasers for 980-nm band
Bugajski M., Mroziewicz B., Regiński K., Muszalski J., Kubica J., Zborszczyk M., Sajewicz P., Piwoński T., Jachymek A., Rutkowski R., Ochalski T., Wójcik E., Kowalczyk E., Maląg A., Kozłowska A., Dobrzański L., Jagoda A.
Opto-Electronics Review
|
2001
|
Vol. 9, No. 1
35-47
EN
Strained layer InGaAsIGaAs SCH SQW (separate confinement heterostructure single quantum well) lasers were grown by a molecularbeam epitaxy (MBE). Highly reliable CW (continuous wave) 98O-nm. broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation and ridge waveguide construction. Threshold current densities of the order of Jth =280 A/cm² (for the resonator length L = 700 um) and differential efficiency ƞ = 0.40 W/A (41%) from one mirror were obtained. The record wall-plug efficiency for AR/HR coated devices was equal to 54%. Theoretical estimations of above parameters. obtained by numerical modelling of devices were Jth = 210 A/cm² and ƞ = 0.47 W/A from one mirror, respectively. Degradation studies revealed that uncoated and AR/HR coated devices did not show any appreciable degradation after 3000 hr of CW operation at at 35°C heat sink temperature at the constant optical power (50 mW) conditions
first rewind previous Strona / 1 next fast forward last
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.