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Exchange coupling field in top, bottom, and dual type IrMn spin valves coupled to CoFe

Hwang J. Y., Rhee J. R.

Materials Science

2003

Vol. 21, No. 1

47-54

A comparative study of Co75Fe25/Ir22Mn78 exchange biased top, bottom, and dual type spin valves is presented. IrMn pinned spin valves were prepared by dc magnetron sputtering onto thermally oxidized Si (111) substrates at room temperature under a magnetic field of about 100 Oe. For as-deposited top type spin valves the magnetoresistance (MR) ratio and exchange coupling field (Hex) were 5.6% and 430 Oe, respectively. For bottom IrMn based spin valves the Hex values are much higher (Hex= 1180 Oe) while MR ratio (3.6%) is reduced with respect to top spin valves. The blocking temperatures (TB) of the top and bottom SV were 250 °C and 270 °C, respectively. The results concerning magnetic properties together with structural investigations suggest that Hex is mainly dependent on the quality of fcc (111) crystalline texture while MR ratio is sensitive to both crystalline texture and interface roughness. Dual type spin valves, with MR ratio of 7.6% and Hex of 850/510 Oe, showed two exchange loops due to the differences in Hex between the top and bottom pinning layers.

Angular dependencies of longitudinal magnetoresistivity and planar hall effect of single and multilayered thin films

Ko T. W., Lee J. H., Park B. K., Jang P. W., Hwang D. G., Lee S. S., Kim M. Z., Rhee J. R.

Electron Technology

1998

Vol. 31, No. 1

70-79

Magnetoresistivity and planar Hall effect of a Glass/Fe₇₀Å/(Co₂₁Å/Cu₂₅Å)₂₀ multilayer coupled antiferromagnetically a single layer (Co₈₁Nb₁₉) thin film, and NiO based Glass/NiO₃₅Å/Py₅₀Å/Cu₂₀Å/Py₅₀Å spin valve spin valve are studied. Planar Hall resistivity is analyzed concurrently with the resistivity of each sample. With variation of direction and strength of the applied fields, we found thwt the magnetization process affects significantly the planar Hall effect. We devwloped a simple method to find the easy axis of single layer magnetic thin films. We also observed the variation of magnetization of each layer separately for an antiferromagnetically coupled multilayer, and a NiO-based spin valve with the planar Hall effect.