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Reactive Magnetron Sputtering Technology for Receiving III Nitrides

Kushitashvili Zurab, Bibilashvili Amiran, Dolidze Nugzar, Skhiladze Givi, Guliaevi Revaz

Inżynieria Mineralna

2024

Vol. 1, no. 1

675--680

In the present work is studied synthesis of galium nitride (GaN) and aluminum nitride (AlN) by DC Reactive Magnetron Sputtering technology. As a sputtering target was used high purity (99.9999%) Gallium and Aluminum materials and as a reagent gas was used high purity (99.9999%) Nitrogen. Magnetron sputtering system with strong magnets (1450 mT) allows to make plasma at a low preasure 3 × 10-2 Pa and deposition process was carried out at high vacuum conditions. Deposited layers of GaN and AlN on the sappire substrate was analysed by X-ray diffraction (XRD) and revealed the crystalline nature highly oriented with the (0002) for both nitrides. For chemical composition was measured X-ray Photoelectron Spectroscopy (XPS) and it was found out the ratios of Ga:N and Al:N to be 1.07 and 1.04 respectively. For surface analysis was made Scanning Electron Microscopy (SEM). Optic transmission spectra showed band gaps to be 3.43 eV and 6.13 eV for GaN and AlN respectively.