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Doped cap layer effect on impurity-free vacancy enhanced disordering in InGaAs/InP quantum well structures

An Y. P., Wang Y. D., Cao F.

Optica Applicata

2010

Vol. 40, nr 1

249--254

Strong influence on impurity-free vacancy enhanced disordering by the cap layer doping is studied on the InGaAs/InP quantum well structure with a doped cap layer. The observations are consistent with intermixing experiments using both Si3N4 and SiO2 as encapsulation dielectric layers. The largest intermixing occurs in the n-InP capped samples and is explained by the enhancement in out-diffusion of positive ions by the built-in electric field.