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Structural, electrical and optical properties of AZO/SiO2/p-Si SIS heterojunction prepared by magnetron sputtering

Bo H., Ma Z. Q., Jing X., Lei Z., Sheng Z. N., Feng L., Cheng S., Ling S., Jie M. X., Yue Z. C., Shan Y. Z., Ting Y. Y.

Optica Applicata

2010

Vol. 40, nr 1

15--24

ZnO thin films doped with aluminum (AZO) were deposited on silicon dioxide covered type texturized Si substrates by radio frequency magnetron sputtering, to fabricate AZO/SiO2/p-Si heterojunction, as an absorber for ultraviolet cell. The microstructure, optical and electrical properties of the Al-doped ZnO films were characterized by XRD, SEM, UV-VIS spectrophotometer, current-voltage measurement, and four point probe technique, respectively. The results show that AZO films are of good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 24.42 and 8.92×10-5 A, respectively. And the values of IF/IR (IF and IR stand for forward and reverse current, respectively) at 10 V are found to be as high as 38. It shows fairly good rectifying behavior indicating formation of a diode between AZO and p-Si.

Fabrication and photoelectrical properties of a novel violet and blue enhanced SINP silicon photovoltaic device

Bo H., Ma Z. Q., Jing X., Lei Z., Sheng Z. N., Feng L., Feng L., Cheng S., Ling S., Jie M. X., Jie M. X., Yue Z. C., Shan Y. Z.., Ting Y. Y.

Optica Applicata

2009

Vol. 39, nr 3

547-560

A novel ITO/SiO2/np-silicon violet and blue enhanced photovoltaic device with SINP structure has been fabricated by thermal diffusion of phosphorus. The shallow junction was formed to enhance the spectral responsivity within the wavelength range of 400-600 nm. An ultrathin silicon dioxide was thermally grown at low temperature and RF sputtering of ITO antireflection coating to reduce the reflected light and enhance the sensitivity. The crystalline structure, optical and electric properties of ITO film were determined by an XRD, UV-VIS spectrophotometer, a four point probe and the Hall effect measurement, respectively. The results show that ITO film has high quality. The current-voltage (I-V) characteristics, spectral response and responsivity of the photovoltaic device with high quantum efficiency of violet SINP and deep junction SINP structure were calculated and analyzed in detail.