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1 Opto-Electronics Review

1 2003

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Multilayer strained Si/SiGe structures: fabrication problems, interface characteristics, and physical properties

Orlov L. K., Horvath Z. J., Ivina N. L., Vdovin V. I., Steinman E. A., Orlov M. L., Romanov Y. A.

Opto-Electronics Review

2003

Vol. 11, No. 2

169-174

The objectives of this investigation are structural and physical characteristics of the n-Si1–xGex/n(p)-Si heterojunction under strong elastic deformation of Si1–xGex layers which gives rise to misfit dislocations in the heteroboundary region; the factors playing the main role in formation of the band structure of the system; the use of transmission electron microscopy and optical methods for determination of the phenomena connected with misfit dislocations in the grown epitaxial structure; the electrical characteristics of diode structures and the process of electron-hole recombination via dislocation states in a heterojunction.