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Functional model for the synthesis of nanostructures of the given quality level

Suchikova Y. O., Kovachov S. S., Shishkin G. O., Pimenov D. O., Lazarenko A. S., Bondarenko V. V., Bogdanov I. T.

Archives of Materials Science and Engineering

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2021

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Vol. 107, nr 2

72--84

EN

Purpose: The aim of this paper is to develop a functional model for the synthesis of nanostructures of the given quality level, which will allow to effectively control the process of nanopatterning on the surface of semiconductors with tunable properties. Design/methodology/approach: The paper uses the IDEF0 methodology, which focuses on the functional design of the system under study and describes all the necessary processes with an accuracy sufficient for an unambiguous modelling of the system's activity. Based on this methodology, we have developed a functional model for the synthesis of nanostructures of the given quality level and tested its effectiveness through practice. Findings: The paper introduces a functional model for the synthesis of nanostructures on the surface of the given quality level semiconductors and identifies the main factors affecting the quality of nanostructures as well as the mechanisms for controlling the formation of porous layers with tunable properties. Using the example of etching single-crystal indium phosphide electrochemically in a hydrochloric acid solution, we demonstrate that the application of the suggested model provides a means of forming nanostructures with tunable properties, assessing the quality level of the nanostructures obtained and bringing the parameters in line with the reference indicators at a qualitatively new level. Research limitations/implications: Functional modelling using the IDEF0 methodology is widely used when process control is required. In this study it has been applied to control the synthesis of nanostructures of the given quality level on the surface of semiconductors. However, these studies require continuation, namely, the establishment of correlations between the technological and resource factors of synthesis and the acquired properties of nanostructures. Practical implications: This study has a significant practical effect. Firstly, it shows that functional modelling can reduce the time required to form large batches of the given quality level nanostructures. This has made it possible to substantiate the choice of the initial semiconductor parameters and nanostructure synthesis modes in industrial production from the theoretical and empirical perspective. Secondly, the presented methodology can be applied to control the synthesis of other nanostructures with desired properties and to reduce the expenses required when resources are depleted and the cost of raw materials is high. Originality/value: This paper is the first to apply the IDEF0 methodology to control the given quality nanostructure synthesis. This paper will be of value to engineers who are engaged in the synthesis of nanostructures, to researchers and scientists as well as to students studying nanotechnology.

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Chemical evaluation of the quality of nanostructures synthesized on the surface of indium phosphide

Kovachov S. S., Bogdanov I. T., Pimenov D. O., Bondarenko V. V., Konovalenko A. A., Skurska M. M., Konovalenko I. S., Suchikova Y. O.

Archives of Materials Science and Engineering

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2021

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Vol. 110, nr 1

18--26

EN

Purpose: The article proposes a methodology for determining the chemical quality criterion of porous layers synthesized on the surface of semiconductors, based on taking into account the chemical parameters of the surface that can affect the properties of nanostructures. Design/methodology/approach: The chemical quality criterion was evaluated in terms of stoichiometry, stability of structures over time, uniformity of distribution over the surface, and the presence of an oxide phase. As an example, a calculation is demonstrated for the por-InP/InP structure synthesized on a mono-InP surface. The results of calculating the chemical quality criterion were evaluated using the Harrington scale to rank samples by quality level. Findings: A chemical criterion for the quality of porous layers synthesized on the surface of semiconductors has been developed. This criterion contains a set of indicators sufficient for a comprehensive assessment of the surface condition and is universal in nature. The studies carried out make it possible to reasonably approach the determination of the modes of electrochemical processing of semiconductors and open up new perspectives in the construction of a model of self-organization of a porous structure. Research limitations/implications: The chemical quality criterion does not allow evaluating the obtained nanostructures in terms of geometric parameters. Therefore, in the future, there is a need to develop a morphological quality criterion and determine a methodology for assessing a generalized quality criterion for nanostructures synthesized on the surface of semiconductors, which may include economic, environmental, technological indicators, and the like. Practical implications: Study results are expedient from a practical point of view, since they make it possible to reasonably approach the determination of the modes of electrochemical processing of semiconductors, synthesize nanostructures with predetermined properties, and create standard samples of nanomaterial composition. Originality/value: Methodology for assessing the quality of porous semiconductors by a chemical criterion has been applied for the first time in engineering science. The article will be useful to engineers, who are engaged in the synthesis of nanostructures, researchers and scientists, as well as specialists in nanometrology.

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Optimal ranges determination of morphological parameters of nanopatterned semiconductors quality for solar cells

Suchikova Y. O., Bogdanov I. T., Kovachov S. S., Kamensky D. V., Myroshnychenko V. O., Panova N. Y.

Archives of Materials Science and Engineering

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2020

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Vol. 101, nr 1

15--24

EN

Purpose: The paper aims to determine the values of the main morphological characteristics of nanopatterns, which can be considered as the reference for use as surfaces of solar cells. Design/methodology/approach: The article uses an approach based on the definition of reference indicators of nanopatterns for solar cells by analysing the main parameters of solar cells and comparing them with the possible values of morphological parameters. Correlations of pore radius and visible wavelength, porosity and visible range, wavelength of de Broglie, nanopatterned layer thickness and charge carriers diffusion length, etc., are analysed. Compliance verification of morphological characteristics of nanopatterns with the specified criteria was performed on the example of porous silicon layers. Findings: The conducted research allowed to define the basic values of morphological parameters of porous nanopatterns, namely porousness, pore size (effective diameter), the thickness of the porous layer, and form factor. Reference ranges of morphological parameters of nanopatterns formed on the surface of semiconductors for applications in solar cells are established. Research limitations/implications: The article is devoted to the choice of optimal morphological characteristics of porous nanopatterns on the surface of semiconductors for solar cells. However, for solar cells, other types of nanopatterns can also be applied, for which it is also necessary to develop methods for selecting optimal parameters. Moreover, the prospect of research on this topic is to check the intrusion into a certain range of values of real nanopatterns formed on the surface of semiconductors. Practical implications: In the article the methodology allowing to choose optimal values of morphological parameters of nanopatterns for its application for solar cells is considered. Such studies are of great practical importance for the production of high-quality solar cells based on nanopatterned semiconductors. Originality/value: The article for the first time considers the choice of the nanopattern type and the ranges of morphological parameters in terms of quality assurance of the final product - the solar cell. It is determined that it is necessary to take into account such factors as porousness, pore size, thickness of the porous layer and roundness. A range of optimal values is selected for each of the indicators.

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Oxide crystals on the surface of porous indium phosphide

Suchikova Y. O., Bogdanov I. T., Kovachov S. S.

Archives of Materials Science and Engineering

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2019

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Vol. 98, nr 2

49--56

EN

Purpose: f this paper is to is to establish the patterns of oxide formation on the surface of indium phosphide during electrochemical etching of mono-InP. Design/methodology/approach: A porous surface was formed with the anode electrolytic etching. Morphology of the surface was studied with the help of scanning electron microscope JSM-6490. The analysis of chemical composition of porous surface of samples was also performed. Findings: It was shown that during the electrochemical etching of indium phosphide, oxide films and crystallites form on the surface. It has been established that crystalline oxides are formed mainly on the surface of n-type indium phosphide. Continuous oxide films are predominantly formed on the surface of p-InP. Research limitations/implications: The research was carried out for indium phosphide samples synthesized in the solution of hydrofluoric acid, though, carrying out of similar experiments for crystalline oxides on the surface of porous indium phosphide obtained in other conditions, is necessary. Practical implications: The study of oxide crystals on the surface of porous indium phosphide has great practical importance since it is the reproducibility of experimental results that is the main problem of modern materials science, the more nanoengineering. Oxides can significantly affect the properties of materials. On the one hand, oxides significantly affect the recombination properties of materials, this can impair the operation of semiconductor devices. On the other hand, oxide films can serve as a passivating coating for the surface of a porous semiconductor. Such an oxide property will be useful for the practical application of nanostructured indium phosphide. Therefore, questions of the conditions for the formation of semiconductor intrinsic oxides, their structure, and chemical composition, and also the effect of oxides on the physical and technical characteristics of materials are important. Originality/value: The patterns of oxide formation on the surface of indium phosphide during electrochemical etching are investigated in this work. It is shown for the first time that the structure of an oxide depends on the orientation of the surface of the semiconductor. It was shown that continuous oxide films are formed on the surface of p-InP, and oxide crystalline clusters are formed on the surface of n-InP.