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Crystallographic properties of the HgCdTe layers grown by MBE on CdZnTe(211)B substrates

Rogalska Iwona, Ruszała Marta, Grendysa Jakub, Juś Anna, Wojnarowska-Nowak Renata, Marchewka Michał, Wojtowicz Tomasz

Opto-Electronics Review

2025

Vol. 33, No. 1

art. no. e153809

A review of the specificity of the growth Hg₁-𝑥Cd𝑥Te layers by molecular beam epitaxy (MBE) and results of experimental studies of several Hg₁-𝑥Cd𝑥Te layers grown on Cd𝑦Zn1-𝑦Te (CZT) substrates are presented. It is well known that the performance of Hg₁-𝑥Cd𝑥Te -based detectors strongly depends on the substrate material and its orientation. CZT substrates are among the most commonly used due to their very good lattice match with Hg₁-𝑥Cd𝑥Te absorber material with different Cd content. In the present work, the authors focused on optimizing the MBE growth parameters in order to obtain the best possible crystalline quality of Hg₁-𝑥Cd𝑥Te layers grown on CZT substrates with (211)B orientation, in particular in terms of minimizing the number of defects. Experimental results of the selected structures showed that the obtained undoped Hg₁-𝑥Cd𝑥Te layers of different x have high crystallographic and optical quality, as well as good surface morphology. In particular, high-resolution X-ray diffraction (HRXRD) measurements and their analysis showed that the best structure has a full width at half maximum of rocking curve (FWHM𝑅𝐶) as low as 21.5 arcsec, and that the intensity distribution of diffraction peaks does not indicate the influence of mosaicisity and dislocation density.

Magnetotransport measurements as a tool for searching 3D topological insulators

Śliż Paweł, Sankowska Iwona, Bobko Ewa, Szeregij Eugeniusz, Grendysa Jakub, Tomaka Grzegorz, Żak Dariusz, Płoch Dariusz, Jasik Agata

Metrology and Measurement Systems

2021

Vol. 28, nr 4

725--734

The paper covers some measurement aspects of transport of electrons through metals and semiconductors in magnetic field - magnetotransport - allowing for the determination of electrical parameters characteristic of three-dimensional (3D) topological insulators (TI) (i.e. those that behave like an insulator inside their volume and have a conductive layer on their surface). A characteristic feature of the 3D TI is also a lack of differences between the chemical composition of the conductive surface and the interior of the material tested and the fact that the electron states for its surface conductivity are topologically protected. In particular, the methods of generating strong magnetic fields, obtaining low temperatures, creating electrical contacts with appropriate geometry were presented, and the measurement methods were reviewed. In addition, the results of magnetotransport measurements obtained for two volumetric samples based on the HgCdTe compound grown with the molecular beam epitaxy method are presented.