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Photovoltage formation across Si p-n junction exposed to laser radiation

Ašmontas S., Gradauskas J., Sužiedėlis A., Šilėnas A., Širmulis E., Švedas V., Vaičikauskas V., Vaičiūnas V., Žalys O., Kostylyov V.

Materials Science Poland

2018

Vol. 36, No. 2

337--340

Photovoltage formation across Si p-n junction exposed to laser radiation is experimentally investigated. Illumination of the junction with 1.06 μm wavelength laser radiation leads to formation of classical photovoltage Uph due to intense electronhole pair generation. When the photon energy is lower than the semiconductor forbidden energy gap, the photovoltage U is found to consist of two components, U = Uf + Uph. The first Uf is a fast one having polarity of thermoelectromotive force of hot carriers. The second Uph is classical photovoltage with polarity opposite to Uf. It is found that Uf is linearly dependent on laser intensity. The classical photovoltage is established to decrease with the rise of radiation wavelength due to decrease in two-photon absorption coefficient with wavelength. Predominance of each separate component in the formation of the net photovoltage depends on both laser wavelength and intensity.

Properties of constricted 2DEG/metal structures in microwave electric fields

Kozič A., Suziedelis A., Petkun V., Cerskus A., Shtrikmann H., Gradauskas J., Kundrotas J., Asmontas S.

Optica Applicata

2005

Vol. 35, nr 3

465-470

Detection properties of asymmetrically constricted 2DEG/metaI junctions were investigated at 10 GHz frequency at room and liquid nitrogen temperature. Operation of such detectors is based on non-uniform carrier heating in the constricted region. Different quality of the 2DEG channel was obtained for AlGaAs/GaAs modulation doped heterostructures with superlattice buffer structure and without it. Photoluminescence measurements exhibited effective charge accumulation in the AlGaAs/GaAs potential channel in the case of superlattice buffered structure, while in the non-buffered structure a substantial portion of excited carriers recombined in doped AlGaAs layer. The quality of the 2DEG channel was responsible for different polarity of the detected voltage as well as for different voltage sensitivity; in the case of the non-buffered structure the sensitivity reached almost 200 V/W value.