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Preparation and ferroelectric properties of the thin LiNbO3 and BaTiO3 films

Surowiak Z., Czekaj D., Bakirov A.A., Dudkevich V.P.

Archiwum Nauki o Materiałach

2000

T. 21, nr 1

5-19

Technological conditions of the BaTiO3 and LiNbO3 thin film preparation by r.f. sputtering are presented. It was found that the thin films obtained were characterized by the polycrystalline structure. However, the type of texture as well as the degree of teksture of the formed thin films depended on the technological conditions of the thin film preparation. It was also determined that both BaTiO3 and LiNbO3 thin films showed ferroelectric properties similar to the ones of bulk ferroelectrics. Some peculiarities of the prepared thin films were observed, namely diffused phase transition and the state of intrinsic unpolarity (self-contained polarization).

Przedstawiono warunki otrzymywania cienkich warstw LiNbO3 i BaTiO3 metodą rozpylania w polu w.cz. Otrzymane cienkie warstwy wykazywały strukturę polikrystaliczną . Stopień i rodzaj tekstury takich cienkich warstw zależy od warunków ich otrzymywania. Stwierdzono, że cienkie warstwy BaTiO3 i LiNbO3 charakteryzują się właściwościami ferroelektrycznymi zbliżonymi do właściwości typowych dla ferroelektryków masywnych. Osobliwością otrzymywanych cienkich warstw jest rozmycie przemiany fazowej i obecność wewnętrznej unipolarności (samoistnej polaryzacji).

Electro-acoustic tranducers on the basis of thin PZT films

Surowiak Z., Czekaj D., Bakirov A. A., Dudkievich V. P.

Archives of Acoustics

1999

Vol. 24, no. 3

379-390

In the present work PZT-type thin films have been obtained by RF sputtering and electroacoustic transducers characterized by high sensitivity (?), wide range of measured relative deformations (gamma) and high working frequencies (eta) were built. Polycrystalline ferroelectric thin films with the perovskite type structure and chemical composition Pb(Zr0.53Ti0.45W0.01Cd0.01)O3 have been fabricated by RF sputtering. The films exhibited slightly lower values of dielectric constant, residual polarization and piezoelectric coefficient d33=80x 10-12C/N, as compared with the ceramics of the same chemical composition. The thin films keep such a value of d33 up to the Curie point. On the basis of the PZT-type thin films the isotropic and anisotropic piezoelectric sensors were built and investigated. The electrical signal of the isotropic sensors is proportional to the sum of the main components of the relative deformation tensor whereas the signal of the anisotropic sensors depends on the angle ? between the sensor axis and the main axis of the deformation tensor of the sample under investigation. The sensors are characterized by high stability of the generated signal.