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Significant effect of oxygen atmosphere on the structure, optical and electrical properties of Ti-doped In2O3 transparent conductive thin films

Dong C. J., Yu W. X., Xu M., Chen C., Song Z. Y., Li L., Wang Y. D.

Optica Applicata

2011

Vol. 41, nr 3

765--775

Titanium-doped indium oxide (In2O3) transparent conductive thin films were deposited on glass and sapphire (0001) substrates with/without oxygen atmosphere by DC magnetron sputtering at 300 °C. The content of titanium is estimated to be about 1.8 at.% using energy dispersive spectroscopy. The smooth surfaces were covered with more uniform octahedral grains. X-ray diffraction measurements indicated that the preferential growth orientation along the (400) plane for the sample grown without oxygen atmosphere shifts to (222) for the sample grown in the oxygen atmosphere. The average optical transmittance of the sample grown with the introduction of oxygen varies from 70% to 90% in the visible region, which corresponds well to the variation of carrier and mobility. Hence, both intermediate dopant and oxygen atmosphere will provide the optimum balance between carrier concentration and mobility leading to the best transport properties of Ti-doped In2O3 films.

Doped cap layer effect on impurity-free vacancy enhanced disordering in InGaAs/InP quantum well structures

An Y. P., Wang Y. D., Cao F.

Optica Applicata

2010

Vol. 40, nr 1

249--254

Strong influence on impurity-free vacancy enhanced disordering by the cap layer doping is studied on the InGaAs/InP quantum well structure with a doped cap layer. The observations are consistent with intermixing experiments using both Si3N4 and SiO2 as encapsulation dielectric layers. The largest intermixing occurs in the n-InP capped samples and is explained by the enhancement in out-diffusion of positive ions by the built-in electric field.