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Growth, structural and optical properties of novel nonlinear optical potassium phthalate di lithium borate (KPDLiB) single crystals

Mohanraj K., Balasubramanian D., Jhansi N.

Materials Science Poland

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2020

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Vol. 38, No. 2

214--218

EN

Novel nonlinear optical semi-organic, potassium phthalate di lithium borate (KPDLiB) single crystals were successfully grown by the slow solvent evaporation technique. Good crystalline nature and an orthorhombic structure were confirmed by powder X-ray diffraction and single crystal X-ray diffraction studies. The functional groups of KPDLiB were identified using FT-IR spectrum recorded in the range of 4000 cm-1 to 450 cm-1. UV-Vis spectrum showed transmitting ability of the crystals in the entire visible region. The photoluminescence spectrum exhibited good fluorescence emission in a visible region at 384 nm, 416 nm and 578 nm. The second harmonic generation efficiency of the grown crystal was evaluated from Kurtz powder technique.

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Synthesis, growth, and characterization of hexagonal shaped potassium-boro-phthalate (KBP) single crystal by slow solvent evaporation method for optoelectronics applications

Mohanraj K., Balasubramanian D., Jhansi N.

Materials Science Poland

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2019

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Vol. 37, No. 4

535--540

EN

A novel nonlinear optical crystal of potassium-boro-phthalate (KBP) was grown by a slow solvent evaporation technique. The crystalline nature and cell parameters were analyzed using X-ray diffraction (XRD) study. The presence of various functional groups was determined by Fourier transform infrared spectroscopy (FT-IR) spectral analysis. The linear optical properties were determined by UV-Vis-NIR spectral analysis. The dielectric constant and dielectric loss of KBP were measured in the frequency range of 500 Hz to 5 MHz at different temperatures. The mechanical properties of KBP single crystal were studied using Vickers microhardness tester. The linear and nonlinear optical properties of the grown crystals were studied to assess its suitability for device fabrication.

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Studies on structural, optical and electrical properties of electron beam evaporated Cu2SnSe3 thin films

Helan P. P. J., Mohanraj K., Sivakumar G.

Materials Science Poland

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2016

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Vol. 34, No. 4

703--707

EN

The present work describes the deposition of semiconducting Cu2SnSe3 thin films by electron beam evaporation method. The structure of the deposited films was characterized by XRD and Raman analysis. X-ray diffraction study revealed that the Cu2SnSe3 thin films had a cubic sphalerite-like structure with crystallite size of 12 nm. Raman spectrum of the thin films confirmed the phase purity. FESEM analysis showed a continuous film with polydispersed grains of a diameter less than 1 цш and the elemental composition was confirmed by EDS spectrum. The UV-Vis spectrum revealed that the sample had high absorption in the visible region and the band gap was found to be 1.15 eV. The I-V graph exhibited the electrical resistivity and conductivity of the film as 2.13 Ω-cm and 0.468 S/cm, respectively. Thus, the electron beam evaporated Cu2SnSe3 thin films showed high purity of structure and good morphological, optical and electrical properties comparable with other methods of thin film deposition.