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Growth and optical properties of Nd:YVO₄ laser crystals

Kaczmarek S. M., Łukasiewicz T., Giersz W., Jabłoński R., Jabczyński J. K., Świrkowicz M., Gałązka Z., Drozdowski W., Kwaśny M.

Opto-Electronics Review

1999

Vol. 7, No. 2

149-152

Growth conditions for Nd:YVO₄ crystals and some optical properties are presented. The obtained Nd:YVO₄ crystal shows lower content of point defects and consequently, lower susceptibility to ionising radiation. ESR measurements show the presence of V ions in intersitial sites with another than 5t valency. Obtained by Czochralski method crystals reveal very good optical properties, some of which are better than for Nd:YAG.