The films of CuInSe2 (CIS) were prepared by selenization of Cu/In multilayer precursors grown by magnetron sputtering. The layers were selenized "in vacuo" using a graphite box with elemental selenium at temperature of 500 st.C. To contain the graphite box the quartz tube furnace was built. The SPICE temperature model of the object was proposed to perform temperature control requirements. Selenization was realised using a two step reaction profile (250 st.C and 550 st.C). The CuInSe2 film formation was observed using scanning electron microscopy (SEM) and X-ray technique.
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