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The bandgap energy of the dilute bismuth GaBixSb1−x alloy depending on temperature

Zhao Chuan-Zhen, Qi Xue-Lian

Materials Science Poland

2021

Vol. 39, No. 3

298--304

The bandgap energy of the dilute bismuth GaBixSb1−x alloy vs. temperature is investigated in this study. Its reduced temperature-sensitiveness is because of the localized character of the valence band states (VBS). In order to describe the reduced temperature-sensitiveness of the bandgap energy, a new term including localized energy is added to Varshni's equation. It is found that the localized energy exhibits an increasing trend as the bismuth fraction increases, which indicates that the localized character of the VBS becomes strong with the increasing bismuth fraction. It is also found that the influence of the bismuth fraction on the temperature dependence of the bandgap energy of GaBixSb1−x is smaller than that of GaBixSb1−x. In addition, the element indium is undoubtedly a good candidate to lessen the bismuth fraction to realize that the spin-orbit-splitting (SOP) energy surpasses the bandgap energy in GaBixSb1−x.

Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y

Zhao Chuan-Zhen, Ren He-Yu, Sun Xiao-Dong, Wang Sha-Sha, Lu Ke-Qing

Materials Science Poland

2020

Vol. 38, No. 2

248--252

Dilute nitride and antimony GaNAsSb alloy can be considered as an alloy formed by adding N and Sb atoms into the host material GaAs. Under this condition, its band gap energy depending on pressure can be divided into two regions. In the low pressure range, the band gap energy is due to two factors. One is the coupling interaction between the N level and the Γ conduction band minimum (CBM) of GaAs. The other one is the coupling interaction between the Sb level and the Γ valence band maximum (VBM) of GaAs. In the high pressure range, the band gap energy depends also on two factors. One is the coupling interaction between the N level and the X CBM of GaAs. The other one is the coupling interaction between the Sb level and the Γ VBM of GaAs. In addition, it has been found that the energy difference between the Γ CBM and the X CBM in GaNAsSb is larger than that in GaAs. It is due to two factors. One is the coupling interaction between the N level and the Γ CBM of GaAs. The other is the coupling interaction between the N level and the X CBM of GaAs.