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Influence of RF ICP PECVD process parameters of diamond-like carbon films on DC bias and optical emission spectra

Oleszkiewicz W, Markowski J, Srnanek R, Kijaszek W, Gryglewicz J, Kovac J, Tlaczala M

Optica Applicata

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2013

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Vol. 43, nr 1

109--115

EN

The work presents the results of a research carried out with PlasmaLab Plus 100 system, manufactured by Oxford Instruments Company. The system was configured for deposition of diamond-like carbon films by ICP PECVD method. The change of an initial value of DC bias was investigated as a function of set values of the generator power (RF generator and ICP generator) in the constant power of the RF generator operation mode. The research shows that the value of DC bias nearly linearly depends on the RF generator power value and is affected only in a small degree by the power of ICP discharge. The capability of an installed OES spectrometer has been used to ensure the same starting conditions for the deposition processes of DLC films. The analysis of OES spectra of RF plasma discharge used in the deposition processes shows that the increase in ICP discharge power value results in the increased efficiency of the ionization process of a gaseous precursor (CH4). The quality of deposited DLC layers was examined by Raman spectroscopy. Basing on the acquired Raman spectra, the theoretical content of sp3 bonds in the structure of the film was estimated. The content is ranging from 30% to 65% and depends on ICP PECVD deposition process parameters.

2

Zastosowanie InGaAsN w konstrukcji ogniwa słonecznego p-i-n

Dawidowski W., Ściana B., Zborowska-Lindert I., Pucicki D., Radziewicz D., Bielak K., Latkowska M., Kovac J., Tłaczała M.

Elektronika : konstrukcje, technologie, zastosowania

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2012

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Vol. 53, nr 7

90-92

PL

Wzrost światowego zapotrzebowania na energię elektryczną wymusza rozwój badań w zakresie alternatywnych źródeł energii. Fotowoltaika wydaje się być perspektywicznym i nieszkodliwym dla środowiska sposobem konwersji promieniowania słonecznego na sygnał elektryczny. Obok powszechnych już ogniw i modułów krzemowych aktualnie badane są wysokosprawne, wielozłączowe ogniwa bazujące ma materiałach AIIIBV. W niniejszej pracy przedstawiono wyniki dotyczące zastosowania poczwórnych związków półprzewodnikowych InGaAsN w konstrukcji ogniwa słonecznego p-i-n.

EN

The worldwide increase of electric power consumption forces the development of alternative sources of energy. Photovoltaics seems to be a promising and harmless to the natural environment method of producing electrical power. Besides silicon cells and panels, present researches are focused on high efficiency and multijunction solar cells based on AIIIBV semiconductors. This paper presents the results of application of the new InGaAsN semiconductor compounds in the p-i-n solar cell construction.

3

New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors

Wośko M., Paszkiewicz B., Radziewicz D., Ściana B., Paszkiewicz R., Tłaczała M., Kovac J., Vincze A.

Optica Applicata

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2009

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Vol. 39, nr 4

739-747

EN

In this paper, the authors present a new attempt to the growth of AlGaAs structures with continuous change of aluminum content by metalorganic vapor phase epitaxy (MOVPE) technique. The new method of design of multistage growth process for functionally graded semiconductor materials (FGM) has been proposed. A comparison between classical single stage and multistage growth process has been carried out. The analysis of PVS, ECV and SIMS results of fabricated photodetector structures shows significant differences in composition profile of theoretically estimated and fabricated structures, and prove that the new conception of multistage process has more advantages over classical single stage procedure.

4

AlGaAs/GaAs heterojunction phototransistor with Zn delta-doped base region

Ściana B., Radziewicz D., Pucicki D., Tłaczała M., Kovac J., Srnanek R.

Optica Applicata

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2005

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Vol. 35, nr 3

645-650

EN

The paper presents the technology and characterisation of n-p-n AlGaAs/GaAs heterojunction phototransistor (HPT) with a thin (50 nm) Zn delta-doped GaAs base region. Such a construction of the HPT transistor was applied to obtain higher current gain and lower power consumption. The electrical and optical properties of the HPT transistor were examined using electrochemical capacitance-voltage (EC-V) measurements, photovoltage, photocurrent and micro-Raman spectroscopies. The measured and simulated I-U characteristics as well as results of time response measurements are also presented and discussed. All investigations were carried out without a base bias ("floating base").