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How to make GaMnAs with high ferromagnetic phase transition temperature?

Sadowski J., Domagała J. Z., Kanski J., Rodriguez C. H., Terki F., Charar S., Maude D.

Materials Science Poland

2006

Vol. 24, No. 3

617--625

We analyze the role of structural defects in GaMnAs and demonstrate how their density can be drastically reduced by in situ post-growth annealing under As capping. Modifications of the magnetic, transport and structural properties of the annealed GaMnAs layers are presented. The main result is that the Curie temperatures are strongly increased relative those of the as-grown layers, from typically 70 - 80 K to 150 - 160 K. The annealed layers exhibit well-ordered smooth surfaces, suitable for further epitaxial overgrowth.

Ferromagnetyzm cienkich warstw i supersieci GaMnAs/GaAs

Sadowski J., Kanski J., Karlsteen M., Svedlindh P., Mathieu R., Domagała J. Z., Bąk-Misiuk J.

Elektronika : konstrukcje, technologie, zastosowania

2001

Vol. 42, nr 8-9

7-11

GaMnAs is a semiconductor exhibiting low temperature (below 110 K) ferromagnetic phase transition caused by interactions of carriers (holes) with Mn spins. The paper presents properties of thin GaMnAs layers with Mn conaAs spacer. This dependence is presented for structures with two different thickness of GaMnAs layers - 12 and 16 molecular layers (34 Å and 45 Å). In both cases the ferromagnetism in GaMnAs/GaAs superlattice structures was not observed ofor GaAs spacer layer thickness bigger than 9 molecular layers (25 A). This is tentatively explained by the thickness dependent profile of concentration of carriers (holes) in GaMnAs.

Azotek galu : nowy rozdział w badaniach powierzchniowej struktury elektronowej półprzewodników

Kowalski B. J., Iwanowski R. J., Kopalko K., Orłowski B. A., Sadowski J., Kanski J., Pluciński Ł., Johnson R. L., Grzegory I., Porowski S.

Elektronika : konstrukcje, technologie, zastosowania

2001

Vol. 42, nr 8-9

23-25

The results of investigations of the (0001) (N-polar) surface of GaN bulk crystals are presented together with a brief review of the knowledge about GaN surface electronic structure accumulated up to the present. The band structure of GaN(0001) - (1 x 1) in the directions G-A and G-K has been analysed on the grounds of the data obtained by means of angle-resolved photoemission spectroscopy. The proposed interpretation of the results is shown to be consistent with the available results of calculations based on the model of the GaN(0001) - (1 x 1):Ga surface.