The paper presents the modeling of scattering of light photons in turbid medium, in which the relative change in light intensity by an elementary plane-parallel layer is proportional to the superposition of spatially homogeneous and spatially inhomogeneous summands. Taking into account the light intensity attenuation by a plane-parallel layer of the spatial nonlinearity transport coefficient of photons, the interaction with the scattering centers in the integral law does not significantly affect the anisotropy scattering regularity and statistical regularities, in which the transport coefficient is spatially inhomogeneous.
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Analyzed the two main methods of AFM, the effect of which is essential in the research of individual microscopic adsorbed on the surface of a solid substrate: the broadening of the profile and the effect of understating the AFM height images of objects.
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We propose to use technology of electrochemical formation of low-dimensional porous silicon(porSi), which is compatible with the standard technologies of silicon VLSI, for creation of sensor part of MEMS "Lab-on-chip" type.
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