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Investigations of laser deposited semiconductor layers with the STM

Piotrowski T., Pułtorak J., Kulumbetov Z. E., Liptuga A. I., Plyatsko S. V.

Electron Technology

1998

Vol. 31, No. 2

219-223

In the work results of topographic measurements with the STM (scanning tunneling microscope) for the determination of the surface roughness and grain dimensions of PbTe/BaF₂ layers grown by the source evaporation technique have been presented. The measuremants have been carried out for various substrate temperatures (100 ÷ 400°C) and various power densities of the laser beam. A modulated infrared laser with hv