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Estimation of optical parameters of silicon single crystals with different orientations

El-Nahass M. M., Ali H. A. M.

Materials Science Poland

2019

Vol. 37, No. 1

65--70

Optical properties of Si single crystals with different orientations (1 0 0) and (1 1 1) were investigated using spectrophotometric measurements in a spectral range of 200 nm to 2500 nm. The data of optical absorption revealed an indirect allowed transition with energy gap of 1.1 ± 0.025 eV. An anomalous dispersion in addition to a normal dispersion was observed in the spectra of refractive index. The normal dispersion of the refractive index was discussed according to Wemple-DiDomenico single oscillator model. The oscillator energy Eo, dispersion energy Ed, high frequency dielectric constant ϵ∞, lattice dielectric constant ϵL and electronic polarizability αe were estimated. The real ϵ1 and imaginary ϵ2 parts of dielectric constant were also determined.

Electrical properties of tin phthalocyanine-based heterostructures: SnPcCl2/GaP, SnPcCl2/InP and SnPcCl2/GaAs

El-Nahass M. M., Farid A. M., Amer H. H., Abdel-Rahman K. F., Ali H. A. M.

Materials Science Poland

2009

Vol. 27, No. 2

385--395

Electrical characteristics of organic/inorganic, SnPcCl2/GaP, SnPcCl2/GaAs and SnPcCl2/InP (Pc standing for phthalocyanine) heterojunctions were studied. Current density-voltage (J-V) characteristics showed thermionic emission conduction at relatively low voltages followed by a space charge limited conduction mechanism at relatively high voltages. The capacitance-voltage (C-V) characteristics indi cated that the devices have an abrupt nature. Various parameters have been determined from the J-V and C-V analysis for the three devices.