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2 Materials Science Poland

2 2009

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Observation of electron injection in an organic field-effect transistor with electroluminescence

Ohshima Y., Kohn H., Lim E., Manaka T., Iwamoto M.

Materials Science Poland

2009

Vol. 27, No. 3

719--726

A tetracene field-effect transistor (FET) with Au source and drain electrodes showed p-channel type behaviour, where the injected holes were the main carriers. Application of an ac electric field to the source electrode, while drain and gate electrodes were grounded, induced electroluminescence (EL) around the source electrode that was caused by alternating electron and hole injection. This result indicated that electron injection into tetracene was possible from a metal with a high work function such as Au. The application of an ac voltage superposed on a dc voltage showed that electron injection was assisted by the space-charge field that originated from holes accumulated around the source electrode.

Ambipolar injection into pentacene field effect transistor observed by time-resolved optical second harmonic generation imaging

Manaka T., Nakao M., Lim E., Iwamoto M.

Materials Science Poland

2009

Vol. 27, No. 3

709--717

Ambipolar carrier injection from gold electrode into pentacene was investigated by time-resolved optical second harmonic generation (TRM-SHG) imaging. Smooth hole injection is verified by rapid decrease of the SHG intensity at the electrode edge, indicating the absence of an injection barrier. In contrast, TRM-SHG results clearly indicated the presence of electron injection from the high-work function metal into the electrode, though after injection electrons were trapped in the channel and could not contribute to the conduction. Transient electric field distribution due to the injected holes and electrons were evaluated based on the SHG intensity distribution.