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1 1999

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ALxGayIn₁-x-yAs/InP : based quantum well infrared photodetectors

Jelen C., Razeghi M.

Opto-Electronics Review

1999

Vol. 7, No. 1

1-17

In order to tune the wavelength of a lattice-matched quantum well infrared photodetector (QWIP) over the range 3-20 µm, new designs are demostrated for the first time which utilise ALxGayIn₁-x-yAs layers lattice-matched to InP and grown by gas-source molecular beam epitaxy. We demonstrate 8, 13, and 18-µm QWIPs using the lattice-matched n-doped (Al xGa₁-x)₀,₄₈In₀,₅₂As/InP system. We also review QWIP structures of Ga₀,₄₇In₀,₅₃As/Al₀,₄₈In₀,₅₂As grown on InP substrate with peak photoresponse at 4 µm. Combining these two materials, we report the first multicolor detectors that combine lattice-matched quantum wells of Ga₀,₄₇In₀,₅₃As/Al₀,₄₈In₀,₅₂As and Ga₀,₄₇In₀,₅₃As/InP. Utilising two contacts, a voltage tunable, lattice-matched, two colour QWIP with a peak wavelength of 8 µm at a bias of V = 5 V and a peak wavelength of 4 µm at V = 10 V is demonstrated. Using the measured noise data for Ga₀,₄₇In₀,₅₃As/InP detectors, we have calculated the thermal generation rate, bias-dependent gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate(~ 7 x 10²² cm⁻³ s⁻¹) is similar to AlxGa₁-xAs/GaAs QWIPs with similar peak wavelengths, but the gain is 50 times larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers.